MMDF2N02E, MMDF2N02ER1, MMDF2N02ER2 Selling Leads, Datasheet
MFG:MOT Package Cooled:2004 D/C:SOP8
MMDF2N02E, MMDF2N02ER1, MMDF2N02ER2 Datasheet download

Part Number: MMDF2N02E
MFG: MOT
Package Cooled: 2004
D/C: SOP8
MFG:MOT Package Cooled:2004 D/C:SOP8
MMDF2N02E, MMDF2N02ER1, MMDF2N02ER2 Datasheet download

MFG: MOT
Package Cooled: 2004
D/C: SOP8
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Datasheet: MMDF2N02E
File Size: 283036 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: MMDD110T1
File Size: 157687 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: MMDD110T1
File Size: 157687 KB
Manufacturer:
Download : Click here to Download
MiniMOSETM devices are an advanced series of power MOSFETs which utilize Motorola's TMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the draintosource diode has a low reverse recovery time. MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dcdc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive - Can Be Driven by Logic ICs
• Miniature SO8 Surface Mount Package - Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• IDSS Specified at Elevated Temperatures
• Avalanche Energy Specified
• Mounting Information for SO8 Package Provided
|
Rating |
Symbol |
Value |
Units |
| DraintoSource Voltage |
VDS |
50 |
V |
| GatetoSource Voltage - Continuous |
VGS |
±20 |
V |
| Drain Current - Continuous @ TA = 25°C Drain Current - Continuous @ TA = 100°C Drain Current - Single Pulse (tp 10s) |
ID ID IDM |
3.6 2.5 18 |
Adc Apk |
| Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25°C (VDD = 20 Vdc, VGS = 10 Vdc, Peak IL = 9.0 Apk, L = 6.0 mH, RG = 25 ) |
EAS |
245 |
mJ |
| Operating and Storage Temperature Range |
TJ,Tstg |
55 to 150 |
°C |
| Total Power Dissipation @ TA = 25°C(1) |
PD |
2.0 |
W |
| Thermal Resistance Junction to Ambient (1) |
RJA |
62.5 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 0.0625, from case for 10 seconds |
TL |
260 |
°C |

