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MFG:MOT Package Cooled:SOP8


Part Number: MMDF1N05E
MFG: MOT
Package Cooled: SOP8
Description: MiniMOSETM devices are an advanced series of power MOSFETs which utilize Motorola's TMOS pr...
MFG:MOT Package Cooled:SOP8


MFG: MOT
Package Cooled: SOP8
Description: MiniMOSETM devices are an advanced series of power MOSFETs which utilize Motorola's TMOS pr...
MiniMOSETM devices are an advanced series of power MOSFETs which utilize Motorola's TMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the draintosource diode has a low reverse recovery time. MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dcdc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive - Can Be Driven by Logic ICs
• Miniature SO8 Surface Mount Package - Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed
• Avalanche Energy Specified
• Mounting Information for SO8 Package Provided
• IDSS Specified at Elevated Temperature
|
Rating |
Symbol |
Value |
Units |
| DraintoSource Voltage |
VDS |
50 |
V |
| GatetoSource Voltage - Continuous |
VGS |
±20 |
V |
| Drain Current - Continuous - Pulsed |
ID IDM |
2.0 10 |
A |
| Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25°C(VDD=25 V,VGS=10 V,IL = 2 Apk) |
EAS |
300 |
mJ |
| Operating and Storage Temperature Range |
TJ,Tstg |
55 to 150 |
°C |
| Total Power Dissipation @ TA = 25°C |
PD |
2.0 |
W |
| Thermal Resistance Junction to Ambient (1) |
RJA |
62.5 |
°C/W |
| Maximum Temperature for Soldering, Time in Solder Bath |
TL |
260 10 |
°C Sec |
MMDF1N05E
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