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MMDF2N02ER2G, MMDF2N05Z, MMDF2N05ZR2

Table of contents:
Info of MMDF2N02ER2G
Info of MMDF2N05Z
Info of MMDF2N05ZR2

MMDF2N02ER2G, MMDF2N05Z, MMDF2N05ZR2 Selling Leads, Datasheet

MFG:ON Package Cooled:SOP8 D/C:1950

MMDF2N02ER2G, MMDF2N05Z, MMDF2N05ZR2 Picture

MMDF2N02ER2G, MMDF2N05Z, MMDF2N05ZR2 Datasheet download

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Part Number: MMDF2N02ER2G

MFG: ON

Package Cooled: SOP8

D/C: 1950

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MMDF2N05ZR2 General Description

The MMDF2N05ZR2 is a TMOS dual N-channel with monolithic zener ESD protected gate.EZFETsE are an advanced series of power MOSFETs which utilize Motorola's High Cell Density TMOS process and contain monolithic backtoback zener diodes. These zener diodes provide protection against ESD and unexpected transients. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the draintosource diode has a very low reverse recovery time.EZFET devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dcdc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives.

The MMDF2N05ZR2 has the following features include:(1)ultra low RDS(on) provides higher efficiency and extends battery life;(2)logic level gate drive-can be driven by logic ICs;(3)miniature SO-8 surface mount package-saves board space;(4)diode is characterized for use in bridge circuits;(5)diode exhibits high speed, with soft recovery;(6)Idss specified at elevated temperature;(7)mounting information for so-8 package provided.Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled.The lengths of various switching intervals (Dt) are determined by how fast the FET input capacitance can be charged by current from the generator.

The absolute maximum ratings of the MMDF2N05ZR2 are:(1)drain-to-source voltage:50V;(2)storage temperature range:-55 to +150;(3)operating temperature range:-55 to +150;(4)gate-to-source voltage:±15V.The resistive switching time variation versus gate resistance shows how typical switching performance is affected by the parasitic circuit elements. If the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses.

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