MFG:ON Semiconductor Category:Discrete Semiconductor Products Package Cooled:SO-8 D/C:05+
MMDF2P02E, MMDF2P02ER2, MMDF2P02ER2G Datasheet download
Category: Discrete Semiconductor Products
MFG: ON Semiconductor
Package Cooled: SO-8
D/C: 05+
Description: MOSFET PWR P-CH 25V 2.5A 8-SOIC
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Datasheet: MMDF2P02E
File Size: 280606 KB
Manufacturer: MOTOROLA [Motorola, Inc]
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Datasheet: MMDD110T1
File Size: 157687 KB
Manufacturer:
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PDF/DataSheet Download
Datasheet: MMDD110T1
File Size: 157687 KB
Manufacturer:
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MiniMOSTM devices are an advanced series of power MOSFETs which utilize Motorola's TMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the draintosource diode has a low reverse recovery time. MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dcdc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
|
Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
25 |
Vdc |
| GatetoSource Voltage - Continuous |
VGS |
± 20 |
Vdc |
| Drain Current - Continuous @ TA = 25 Drain Current - Continuous @ TA = 100 Drain Current - Single Pulse (tp 10 s) |
ID |
2.5 |
Adc |
| Total Power Dissipation @ TA = 25 (2) Derate above 25 |
PD |
2.0 |
W |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 150 |
|
| Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25 (VDD = 20 Vdc, VGS = 10 Vdc, Peak IL = 7.0 Apk, L = 10 mH, RG = 25 ) |
EAS |
245 |
mJ |
| Thermal Resistance, Junction to Ambient (2) |
RJA |
62.5 |
/W |
| Maximum Lead Temperature for Soldering Purposes, 0.0625, from case for 10 seconds |
TL |
260 |
• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive - Can Be Driven by Logic ICs
• Miniature SO8 Surface Mount Package - Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, with Soft Recovery
• IDSS Specified at Elevated Temperatures
• Avalanche Energy Specified
• Mounting Information for SO8 Package Provided
| Technical/Catalog Information | MMDF2P02ER2 |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | 2 P-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25° C | 2.5A |
| Rds On (Max) @ Id, Vgs | 250 mOhm @ 2A, 10V |
| Input Capacitance (Ciss) @ Vds | 475pF @ 16V |
| Power - Max | 2W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 15nC @ 10V |
| Package / Case | 8-SOIC (3.9mm Width) |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | MMDF2P02ER2 MMDF2P02ER2 |
| Technical/Catalog Information | MMDF2P02ER2G |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | 2 P-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25° C | 2.5A |
| Rds On (Max) @ Id, Vgs | 250 mOhm @ 2A, 10V |
| Input Capacitance (Ciss) @ Vds | 475pF @ 16V |
| Power - Max | 2W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 15nC @ 10V |
| Package / Case | 8-SOIC (3.9mm Width) |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | MMDF2P02ER2G MMDF2P02ER2G |
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