MMDF3N06HD, MMDF4N01, MMDF4N01HD Selling Leads, Datasheet
MFG:ON Package Cooled:SO-8 D/C:09+
MMDF3N06HD, MMDF4N01, MMDF4N01HD Datasheet download
Part Number: MMDF3N06HD
MFG: ON
Package Cooled: SO-8
D/C: 09+
MFG:ON Package Cooled:SO-8 D/C:09+
MMDF3N06HD, MMDF4N01, MMDF4N01HD Datasheet download
MFG: ON
Package Cooled: SO-8
D/C: 09+
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
TOP
PDF/DataSheet Download
Datasheet: MMDF3N06HD
File Size: 218785 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: MMDF4N01HD
File Size: 288005 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: MMDF4N01HD
File Size: 288005 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
Rating |
Symbol |
Value |
Unit |
Drain-Cto-CSource Volta |
VDSS |
20 |
Vdc |
Drain-Cto-CGate Voltage (RGS= 1.0 M) |
VDGR |
20 |
Vdc |
Gate-Cto-CSource Voltage - Continu |
VGS |
12 |
Vdc |
Drain Current - Continuous @TA = 25 Drain Current - Continuous @TA = 100 Drain Current - Single Pulse (tp 10s) |
ID |
5.2 |
Adc |
Total Power Dissipation @ TA = 25 (1) |
PD |
2.0 |
Watts |
Operating and Storage Temperature Range |
TJ , Tstg |
-55 to 15 |
|
Thermal Resistance - Junction to Ambient(1) |
RJA |
62.5 |
/W |
Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds |
TL |
260 |
` Low RDS(on) Provides Higher Efficiency and Extends Battery Life
` Logic Level Gate Drive - Can Be Driven by Logic IC
` Miniature SO-C8 Surface Mount Package - Saves Board Spa
` Diode Is Characterized for Use In Bridge Circuits
` Diode Exhibits High Speed, With Soft Recovery
` IDSS Specified at Elevated Temperature
` Mounting Information for SO-C8 Package Provide
MiniMOSTM devices are an advanced series of power MOSFETs which utilize Motorola!s High Cell Density HDTMOS process.
These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain-Cto-Csour diode has a very low reverse recovery time.
MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc-Cd converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives.
Rating |
Symbol |
Value |
Unit |
Drain-Cto-CSource Volta |
VDSS |
20 |
Vdc |
Drain-Cto-CGate Voltage (RGS= 1.0 M) |
VDGR |
20 |
Vdc |
Gate-Cto-CSource Voltage - Continu |
VGS |
12 |
Vdc |
Drain Current - Continuous @TA = 25 Drain Current - Continuous @TA = 100 Drain Current - Single Pulse (tp 10s) |
ID |
5.2 |
Adc |
Total Power Dissipation @ TA = 25 (1) |
PD |
2.0 |
Watts |
Operating and Storage Temperature Range |
TJ , Tstg |
-55 to 15 |
|
Thermal Resistance - Junction to Ambient(1) |
RJA |
62.5 |
/W |
Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds |
TL |
260 |
` Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery
` Logic Level Gate Drive - Can Be Driven by Logic IC
` Miniature SO-C8 Surface Mount Package - Saves Board Spa
` Diode Is Characterized for Use In Bridge Circuits
` Diode Exhibits High Speed, With Soft Recovery
` IDSS Specified at Elevated Temperature
` Mounting Information for SO-C8 Package Provide