MFG:ON Semiconductor (VA) Category:Discrete Semiconductor Products Package Cooled:S0D-123 D/C:07+
MMSD914T1G, MMSF10N02Z, MMSF10N02ZR2 Datasheet download
Category: Discrete Semiconductor Products
MFG: ON Semiconductor (VA)
Package Cooled: S0D-123
D/C: 07+
Description: DIODE SWITCH 100V SOD123
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PDF/DataSheet Download
Datasheet: MMSD1000LT1
File Size: 175632 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: MMSF10N02Z
File Size: 189126 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: MMSD1000LT1
File Size: 175632 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
| Technical/Catalog Information | MMSD914T1G |
| Vendor | ON Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 100V |
| Current - Average Rectified (Io) | 200mA (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1V @ 10mA |
| Reverse Recovery Time (trr) | 4ns |
| Current - Reverse Leakage @ Vr | 5A @ 75V |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Mounting Type | Surface Mount |
| Package / Case | SOD-123 |
| Packaging | Digi-Reel? |
| Capacitance @ Vr, F | 4pF @ 0V, 1MHz |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | MMSD914T1G MMSD914T1G MMSD914T1GOSDKR ND MMSD914T1GOSDKRND MMSD914T1GOSDKR |
EZFETsTM are an advanced series of power MOSFETs which utilize Motorola's High Cell Density HDTMOS process and contain monolithic backtoback zener diodes. These zener diodes provide protection against ESD and unexpected transients. These miniature surface mount MOSFETs feature low RDS(on) and true logic level erformance. They are capable of withstanding high energy in the avalanche and commutation modes and the draintosource diode has a very low reverse recovery time.
EZFET devices are designed for use in low voltage, high speed switching applications where power efficiency is important.
|
Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
20 |
Vdc |
| DraintoGate Voltage (RGS = 1.0 M ) |
VDGR |
20 |
Vdc |
| GatetoSource Voltage - Continuous |
VGS |
±12 |
Vdc |
| Drain Current - Continuous @ TA = 25 Drain Current - Continuous @ TA = 100 Drain Current - Single Pulse (tp 10 s) |
ID ID IDM |
10 7.0 80 |
Adc Apk |
| Total Power Dissipation @ TA = 25 (2) |
PD |
2.5 |
Watts |
| Operating and Storage Temperature Range |
55 to 150 |
55 to 150 |
|
| Thermal Resistance - Junction to Ambient (2) |
RJA |
50 |
/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds |
TL |
260 |
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