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Part Number: MMSD16128808S-V

 

 

 

 

Description: The MMSD16128808S-V is a high-speed highly integrated Synchronous Dynamic Random Access Memory contain...


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MMSD16128808S-V General Description


The MMSD16128808S-V is a high-speed highly integrated Synchronous Dynamic Random Access Memory containing 2,147,483,648 bits.

It is organized  with four banks  of 512 Mbit.

Each bank has a 16-bit interface and is selected with specific #CS CLK and CKE.

It is particularly well suited for use in high reliability, high performance and high density system applications, such as solid state mass recorder, server or workstation.

The MMSD16128808S-V is packaged in a 58 pin SOP.

MMSD16128808S-V Maximum Ratings

Parameter
Symbol
Value
Unit
Voltage on any pin relative to VSS
VIN, VOUT
-1.0 ~ 4.6
V
Storage temperature
TSTG
-55 ~ +150
Power dissipation
PD
2
W
V Short circuit current
LOS
50
mA

MMSD16128808S-V Features

`  Stack of eight 256Mbit SDRam.
`  Organized as 128Mx16-bit.
`  Single +3.3V ±0.3V power supply.
`  Fully synchronous ; all signals  registered on positive edge of system clock.
`  Internal  pipelined  operation ; column adress can be changed every  clock  cycle.
`  Programmable  burst   lengths ; 1, 2, 4, 8  or  full  page.
`  Auto  Precharge,  includes  Concurrent  Auto Precharge, and Auto  Refresh Modes.
`  Self Refresh Modes.
`  LVTTL-compatible inputs and outputs.
`  Available Temperature Range :
       0to +70
    -40 to +85
`  Available with screening option for high reliability application (Space, etc...).

MMSD16128808S-V Connection Diagram

MMSD16128808S-V  Connection Diagram

MMSD16128808S-V datasheet

MMSD16128808S-V
PDF/DataSheet Download

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