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Part Number: MMSD16128808S-V
Description: The MMSD16128808S-V is a high-speed highly integrated Synchronous Dynamic Random Access Memory contain...


Description: The MMSD16128808S-V is a high-speed highly integrated Synchronous Dynamic Random Access Memory contain...
The MMSD16128808S-V is a high-speed highly integrated Synchronous Dynamic Random Access Memory containing 2,147,483,648 bits.
It is organized with four banks of 512 Mbit.
Each bank has a 16-bit interface and is selected with specific #CS CLK and CKE.
It is particularly well suited for use in high reliability, high performance and high density system applications, such as solid state mass recorder, server or workstation.
The MMSD16128808S-V is packaged in a 58 pin SOP.
|
Parameter |
Symbol |
Value |
Unit |
| Voltage on any pin relative to VSS |
VIN, VOUT |
-1.0 ~ 4.6 |
V |
| Storage temperature |
TSTG |
-55 ~ +150 |
|
| Power dissipation |
PD |
2 |
W |
| V Short circuit current |
LOS |
50 |
mA |
` Stack of eight 256Mbit SDRam.
` Organized as 128Mx16-bit.
` Single +3.3V ±0.3V power supply.
` Fully synchronous ; all signals registered on positive edge of system clock.
` Internal pipelined operation ; column adress can be changed every clock cycle.
` Programmable burst lengths ; 1, 2, 4, 8 or full page.
` Auto Precharge, includes Concurrent Auto Precharge, and Auto Refresh Modes.
` Self Refresh Modes.
` LVTTL-compatible inputs and outputs.
` Available Temperature Range :
0to +70
-40 to +85
` Available with screening option for high reliability application (Space, etc...).
MMSD16128808S-V
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