MMSF3300, MMSF3300R2, MMSF3P02HD Selling Leads, Datasheet
MFG:MOTOLOLA Package Cooled:SOP8 D/C:09+
MMSF3300, MMSF3300R2, MMSF3P02HD Datasheet download
Part Number: MMSF3300
MFG: MOTOLOLA
Package Cooled: SOP8
D/C: 09+
MMSF3300, MMSF3300R2, MMSF3P02HD
- Table of contents:
Info of MMSF3300
Info of MMSF3300R2
Info of MMSF3P02HD
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About MMSF3300
PDF/DataSheet Download
Datasheet: MMSF3300
File Size: 235293 KB
Manufacturer: MOTOROLA [Motorola, Inc]
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About MMSD1000LT1
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Datasheet: MMSD1000LT1
File Size: 175632 KB
Manufacturer: MOTOROLA [Motorola, Inc]
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About MMSF3P02HD
PDF/DataSheet Download
Datasheet: MMSF3P02HD
File Size: 310071 KB
Manufacturer: MOTOROLA [Motorola, Inc]
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MMSF3300 General Description
WaveFETTM devices are an advanced series of power MOSFETs which utilize Motorola's latest MOSFET technology process to achieve the lowest possible onresistance per silicon area. They are capable of withstanding high energy in the avalanche and commutation modes and the draintosource diode has a very low reverse recovery time. WaveFETTM devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dcdc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
MMSF3300 Maximum Ratings
|
Parameter |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
30 |
Vdc |
| DraintoGate Voltage |
VDGR |
30 |
Vdc |
| GatetoSource Voltage |
VGS |
±20 |
Vdc |
| GatetoSource Operating Voltage |
VGS |
±16 |
Vdc |
| Operating and Storage Temperature Range |
TJ,Tstg |
55 to 150 |
|
| Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25 (VDD = 25 Vdc, VGS = 10 Vdc, L = 18.8 mH, IL(pk) = 7.3 A, VDS = 30 Vdc) |
EAS |
500 |
mJ |
MMSF3300 Features
` Characterized Over a Wide Range of Power Ratings
` Ultralow RDS(on) Provides Higher Efficiency and Extends Battery Life in Portable Applications
` Logic Level Gate Drive - Can Be Driven by Logic ICs
` Diode Is Characterized for Use In Bridge Circuits
` Diode Exhibits High Speed, With Soft Recovery
` IDSS Specified at Elevated Temperature
` Avalanche Energy Specified
` Miniature SO8 Surface Mount Package - Saves Board Space
MMSF3300 Connection Diagram
MMSF3P02HD General Description
MiniMOSTM devices are an advanced series of power MOSFETs which utilize Motorola's High Cell Density HDTMOS process.
These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the draintosource diode has a very low reverse recovery time.
MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dcdc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
MMSF3P02HD Maximum Ratings
|
Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
20 |
Vdc |
| DraintoGate Voltage (RGS = 1.0 M ) |
VDGR |
20 |
Vdc |
| GatetoSource Voltage - Continuous |
VGS |
±20 |
Vdc |
| Drain Current - Continuous @ TA = 25 Drain Current - Continuous @ TA = 100 Drain Current - Single Pulse (tp 10 s) |
ID ID IDM |
5.6 3.6 30 |
Adc Apk |
| Total Power Dissipation @ TA = 25(2) |
PD |
2.5 |
Watts |
| Operating and Storage Temperature Range |
55 to 150 |
55 to 150 |
|
| Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25 (VDD = 20 Vdc, VGS = 5.0 Vdc, IL = 9.0 Apk, L = 14mH, RG = 25 ) |
EAS |
567 |
mJ |
| Thermal Resistance - Junction to Ambient (2) |
RJA |
50 |
/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds |
TL |
260 |
MMSF3P02HD Features
` Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
` Logic Level Gate Drive - Can Be Driven by Logic ICs
` Miniature SO8 Surface Mount Package - Saves Board Space
` Diode Is Characterized for Use In Bridge Circuits
` Diode Exhibits High Speed, With Soft Recovery
` IDSS Specified at Elevated Temperature
` Avalanche Energy Specified
` Mounting Information for SO8 Package Provided
MMSF3P02HD Connection Diagram
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