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MMSF3P02HDR2, MMSF3P02HDR2G, MMSF3P03HD

MMSF3P02HDR2, MMSF3P02HDR2G, MMSF3P03HD Selling Leads, Datasheet

MFG:ON Semiconductor (VA)  Category:Discrete Semiconductor Products  Package Cooled:SOP8  D/C:0631+

MMSF3P02HDR2 Picture

MMSF3P02HDR2, MMSF3P02HDR2G, MMSF3P03HD Datasheet download

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Part Number: MMSF3P02HDR2

Category: Discrete Semiconductor Products

MFG: ON Semiconductor (VA)

Package Cooled: SOP8

D/C: 0631+

Description: MOSFET P-CH 20V 5.6A 8-SOIC

 

 
 
 
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About MMSD1000LT1

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Datasheet: MMSD1000LT1

File Size: 175632 KB

Manufacturer: MOTOROLA [Motorola, Inc]

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About MMSD1000LT1

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Datasheet: MMSD1000LT1

File Size: 175632 KB

Manufacturer: MOTOROLA [Motorola, Inc]

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  • Vendor: Motorola Pack: SO Qty: 1991 Note: stock on hand  Adddate: 2026-06-13
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  • TCW(HK) electronic limited   China
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  • MMS12

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  • Vendor: Motorola Pack: SOT Qty: 1454 Note: stock on hand  Adddate: 2026-06-13
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  • MMSD3070

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  • ALCON TECHNOLOGY CO., LTD.   China
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About MMSF3P03HD

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Datasheet: MMSF3P03HD

File Size: 324279 KB

Manufacturer: MOTOROLA [Motorola, Inc]

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MMSF3P02HDR2 Parameters

Technical/Catalog InformationMMSF3P02HDR2
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C5.6A
Rds On (Max) @ Id, Vgs75 mOhm @ 3A, 10V
Input Capacitance (Ciss) @ Vds 1400pF @ 16V
Power - Max2.5W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs46nC @ 10V
Package / Case8-SOIC (3.9mm Width)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names MMSF3P02HDR2
MMSF3P02HDR2
MMSF3P02HDR2OSCT ND
MMSF3P02HDR2OSCTND
MMSF3P02HDR2OSCT

MMSF3P02HDR2G Parameters

Technical/Catalog InformationMMSF3P02HDR2G
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C5.6A
Rds On (Max) @ Id, Vgs75 mOhm @ 3A, 10V
Input Capacitance (Ciss) @ Vds 1400pF @ 16V
Power - Max2.5W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs46nC @ 10V
Package / Case8-SOIC (3.9mm Width)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MMSF3P02HDR2G
MMSF3P02HDR2G
MMSF3P02HDR2GOSDKR ND
MMSF3P02HDR2GOSDKRND
MMSF3P02HDR2GOSDKR

MMSF3P03HD General Description

MiniMOS(TM) devices are an advanced series of power MOSFETs which utilize Motorola's High Cell Density HDTMOS process.

These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the draintosource diode has a very low reverse recovery time.

MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dcdc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.

MMSF3P03HD Maximum Ratings

Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
30
Vdc
DraintoGate Voltage (RGS = 1.0 M)
VDGR
30
Vdc
GatetoSource Voltage - Continuous
VGS
±20
Vdc
Drain Current - Continuous @ TA = 25
Drain Current - Continuous @ TA = 100
Drain Current - Single Pulse (tp 10 s)
ID
ID
IDM
4.6
3.0
50
Adc
Apk
Total Power Dissipation @ TA = 25 (2)
PD
2.5
Watts
Operating and Storage Temperature Range
55 to 150
55 to 150
Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25
(VDD = 20 Vdc, VGS = 5.0 Vdc, IL = 9.0 Apk, L = 14mH, RG = 25 )
EAS
567
mJ
Thermal Resistance - Junction to Ambient (2)
RJA
50
/W
Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds
TL
260

MMSF3P03HD Features

` Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
` Logic Level Gate Drive - Can Be Driven by Logic ICs
` Miniature SO8 Surface Mount Package - Saves Board Space
` Diode Is Characterized for Use In Bridge Circuits
` Diode Exhibits High Speed, With Soft Recovery
` IDSS Specified at Elevated Temperature
` Avalanche Energy Specified
` Mounting Information for SO8 Package Provided

MMSF3P03HD Connection Diagram

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