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These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for throughtheboard mounting.
MOC206 Maximum Ratings
Rating
Symbol
Value
Unit
INPUT LED
Forward Current - Continuous
IF
60
mA
Forward Current - Peak (PW = 100 s, 120 pps)
IF(pk)
1.0
A
Reverse Voltage
VR
6.0
V
LED Power Dissipation @ TA = 25 Derate above 25
PD
90 0.8
mW mW/
OUTPUT TRANSISTOR
CollectorEmitter Voltage
VCEO
70
V
CollectorBase Voltage
VCBO
70
V
EmitterCollector Voltage
VECO
7.0
V
Collector Current - Continuous
IC
150
mA
Detector Power Dissipation @ TA = 25 Derate above 25
PD
150 1.76
mW mW/
TOTAL DEVICE
InputOutput Isolation Voltage(1,2) (60 Hz, 1.0 sec. duration)
VISO
3000
Vac(rms)
Total Device Power Dissipation @ TA = 25 Derate above 25
PD
250 2.94
mW mW/
Ambient Operating Temperature Range(3)
TA
55 to +100
Storage Temperature Range(3)
Tstg
55 to +150
Lead Soldering Temperature (1/16, from case, 10 sec. duration)
-
260
NOTE: Thickness through insulation between input and output . 0.5 mm.
MOC206 Features
• Convenient Plastic SOIC8 Surface Mountable Package Style • Closely Matched Current Transfer Ratios • Minimum V(BR)CEO of 70 Volts Guaranteed • Standard SOIC8 Footprint, with 0.050, Lead Spacing • Shipped in Tape and Reel, which Conforms to EIA Standard RS481A • Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering • High InputOutput Isolation of 3000 Vac (rms) Guaranteed • UL Recognized File #E54915
MOC206 Typical Application
• Feedback Control Circuits • Interfacing and coupling systems of different potentials and impedances • General Purpose Switching Circuits • Monitor and Detection Circuits