MOC119

Minimum Operating Temperature : - 55 C
Maximum Forward Diode Voltage : 1.5 V
Maximum Operating Temperature : + 100 C
Maximum Power Dissipation : 250 mW
Packaging : Bulk
Input Type : DC
Maximum Collector Current : 150 mA
Maximum Collector Emitter Voltage : 30 V
Isolation Voltage : 5300 Vrms
Maximum Collector Emitter Saturation Voltage : 1 V
Package / Case : PDIP-6
Current Transfer Ratio : 450 %


Features:

• High current transfer ratio of 300%
• No base connection for improved noise immunity
• Underwriters Laboratory (UL) recognized File# E90700


Application

• Appliances, measuring instruments
• I/O interface for computers
• Programmable controllers
• Portable electronics
• Interfacing and coupling systems of different potentials and impedance
• Solid state relays


Pinout




Specifications

Parameter	Symbol	Value	Units
TOTAL DEVICE Storage Temperature	TSTG	-55 to +150	°C
Operating Temperature	TOPR	-55 to +100	°C
Lead Solder Temperature	TSOL	260 for 10 sec	°C
Total Device Power Dissipation @ TA = 25°C	PD	250	mW
Derate above 25°C		2.94	mW/°C
Input-Output Isolation Voltage	VISO	5300	Vac(rms)
EMITTER DC/Average Forward Input Current	IF	60	mA
Reverse Input Voltage	VR	3	V
LED Power Dissipation @ TA = 25°C	PD	120	mW
Derate above 25°C		1.41	mW
DETECTOR Collector-Emitter Voltage	VCEO	30	V
Emitter-Collector Voltage	VECO	7	V
Detector Power Dissipation @ TA = 25°C Derate above 25°C	PD	150 1.76	mW mW/°C
Continuous Collector Current	IC	150	mA

Description

The MOC119 device has a gallium arsenide infrared emitting diode coupled to a silicon darlington phototransistor.