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These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through-the-board mounting.
MOC212-M Maximum Ratings
Rating
Symbol
Value
Unit
EMITTER Forward Current - Continuous
IF
60
mA
Forward Current - Peak (PW = 100 s, 120 pps)
IF(pk)
1.0
A
Reverse Voltage
VR
6.0
V
LED Power Dissipation @ TA = 25 Derate above 25
PD
90 0.8
mW mW/
DETECTOR CollectorEmitter Voltage
VCEO
30
V
EmitterCollector Voltage
VECO
7.0
V
CollectorBase Voltage
VCBO
70
V
Collector Current-Continuous
IC
150
mA
Detector Power Dissipation @ TA = 25 Derate above 25
PD
150 1.76
mW mW/
TOTAL DEVICE InputOutput Isolation Voltage(1,2,3) (f=60 Hz, t=1 min.)
VISO
2500
Vac(rms)
Total Device Power Dissipation @ TA = 25 Derate above 25
PD
250 2.94
mW mW/
Ambient Operating Temperature Range
TA
55 to +100
Storage Temperature Range
Tstg
55 to +150
MOC212-M Features
• UL Recognized (File #E90700, volume 2) • VDE Recognized (File #136616) (add option 'V' for VDE approval, e.g., MOC211V-M) • Convenient Plastic SOIC-8 Surface Mountable Package Style • Standard SOIC-8 Footprint, with 0.050" Lead Spacing • Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering • High Input-Output Isolation of 2500 V AC(rms) Guaranteed • Minimum BV CEO of 30V guaranteed
MOC212-M Typical Application
• General Purpose Switching Circuits • Interfacing and coupling systems of different potentials and impedances • Regulation Feedback Circuits • Monitor and Detection Circuits