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The MOCD211 device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline, plastic package. It is ideally suited for high density applications and eliminates the need for throughtheboard mounting.
MOCD211 Maximum Ratings
Rating
Symbol
Value
Unit
INPUT LED
Forward Current - Continuous
IF
60
mA
Forward Current - Peak (PW = 100 s, 120 pps)
IF (pk)
1.0
A
Reverse Voltage
VR
6.0
V
LED Power Dissipation @ TA = 25°C Derate above 25°C
PD
90 0.8
mW mW/°C
OUTPUT TRANSISTOR
Collector-Emitter Voltage
VCEO
30
V
Collector-Base Voltage
VCBO
70
V
Emitter-Collector Voltage
VECO
7.0
V
Collector Current-Continuous
IC
150
mA
Detector Power Dissipation @ TA = 25°C Derate above 25°C
PD
150 1.76
mW mW/°C
TOTAL DEVICE
Input-Output Isolation Voltage (1,2,3) (f = 60 Hz, 1 min. Duration)
VISO
3000
Vac(rms)
Total Device Power Dissipation @ TA = 25°C Derate above 25°C
PD
250 2.94
mW mW/°C
Ambient Operating Temperature Range
TA
-55 to +100
°C
Storage Temperature Range
Tstg
-55 to +150
°C
Lead Soldering Temperature (1/16" from case, 10 sec. duration)
-
260
°C
MOCD211 Features
• Dual Channel Coupler • Convenient Plastic SOIC8 Surface Mountable Package Style • Minimum V(BR)CEO of 30 Volts Guaranteed • Standard SOIC8 Footprint, with 0.050, Lead Spacing • Shipped in Tape and Reel, which conforms to EIA Standard RS481A • Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering • High InputOutput Isolation of 3000 Vac (rms) Guaranteed • Meets U.L. Regulatory Requirements, File #E54915