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Total Device Dissipation @ TA = 25 Derate above 25
PD
625 5.0
mW mW/
Total Device Dissipation @ TC = 25 Derate above 25
PD
1.5 12
Watts mW/
Operating and Storage Junction Temperature Range
TJ, Tstg
55 to +150
MPS2222A Maximum Ratings
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
75
Volts
Collector-Emitter Voltage
VCEO
40
Volts
Emitter-Base Voltage
VEBO
6.0
Volts
Collector Current-Continuous
IC
600
mA
Power Dissipation at TA=25 Derate above 25
Ptot
625 5.0
mW mW/
Power Dissipation at TC=25 Derate above 25
Ptot
1.5 12
W mW/
Thermal Resistance, Junction to Ambient Air
RQJA
200
/W
Thermal Resistance Junction to Case
RQJC
83.3
/W
Junction Temperature
Tj
150
Storage Temperature Range
TS
Ð55 to +150
MPS2222A Features
·NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. · On special request, this transistor is also manufactured in the pin configuration TO-18. · This transistor is also available in the SOT-23 case with the type designation MMBT2222A