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MPS2111, MPS2222, MPS2222A

MPS2111, MPS2222, MPS2222A Selling Leads, Datasheet

MFG:ON Semiconductor  Category:Discrete Semiconductor Products  Package Cooled:TO-92  D/C:04+

MPS2222 Picture

MPS2111, MPS2222, MPS2222A Datasheet download

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Part Number: MPS2222

Category: Discrete Semiconductor Products

MFG: ON Semiconductor

Package Cooled: TO-92

D/C: 04+

Description: TRANS NPN SS GP 30V TO92

 

 
 
 
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About MPS06

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Datasheet: MPS06

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  • MPS2222A

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About MPS2222

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Datasheet: MPS2222

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Manufacturer: SAMSUNG [Samsung semiconductor]

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  • MPS2222A

  • Vendor: ON D/C: 98+& Qty: 10000  Adddate: 2026-07-10
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  • CHIPMENU INC.   China
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About MPS2222A

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Datasheet: MPS2222A

File Size: 114099 KB

Manufacturer: SAMSUNG [Samsung semiconductor]

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MPS2222 Parameters

Technical/Catalog InformationMPS2222
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)30V
Current - Collector (Ic) (Max)600mA
Power - Max1.5W
DC Current Gain (hFE) (Min) @ Ic, Vce35 @ 100A, 10mV
Vce Saturation (Max) @ Ib, Ic400mV @ 15mA, 150mA
Frequency - Transition250MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-92-3, TO-226AA (Straight Leads)
PackagingBulk
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names MPS2222
MPS2222
MPS2222OS ND
MPS2222OSND
MPS2222OS

MPS2222 Maximum Ratings

Rating
Symbol
MPS2222
MPS2222A
Unit
CollectorEmitter Voltage
VCEO
30
40
Vdc
CollectorBase Voltage
VCBO
60
75
Vdc
EmitterBase Voltage
VEBO
5.0
6.0
Vdc
Collector Current - Continuous
IC
600
mAdc
Total Device Dissipation @ TA = 25
Derate above 25
PD
625
5.0
mW
mW/
Total Device Dissipation @ TC = 25
Derate above 25
PD
1.5
12
Watts
mW/
Operating and Storage Junction
Temperature Range
TJ, Tstg
55 to +150

MPS2222A Maximum Ratings

SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
75
Volts
Collector-Emitter Voltage
VCEO
40
Volts
Emitter-Base Voltage
VEBO
6.0
Volts
Collector Current-Continuous
IC
600
mA
Power Dissipation at TA=25
Derate above 25
Ptot
625
5.0
mW
mW/
Power Dissipation at TC=25
Derate above 25
Ptot
1.5
12
W
mW/
Thermal Resistance, Junction to Ambient Air
RQJA
200
/W
Thermal Resistance Junction to Case
RQJC
83.3
/W
Junction Temperature
Tj
150
Storage Temperature Range
TS
Ð55 to +150

MPS2222A Features

·NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications.
· On special request, this transistor is also manufactured in the pin configuration TO-18.
· This transistor is also available in the SOT-23 case with the type designation MMBT2222A

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