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MPS6532, MPS6534, MPS6543

Table of contents:
Info of MPS6532
Info of MPS6534
Info of MPS6543

MPS6532, MPS6534, MPS6543 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:DIP D/C:09+

MPS6532, MPS6534, MPS6543 Datasheet download

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Part Number: MPS6534

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: DIP

D/C: 09+

Description: TRANSISTOR PNP GEN PURP TO-92

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MPS6534 Parameters

Technical/Catalog Information	MPS6534
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	40V
Current - Collector (Ic) (Max)	800mA
Power - Max	625mW
DC Current Gain (hFE) (Min) @ Ic, Vce	90 @ 100mA, 1V
Vce Saturation (Max) @ Ib, Ic	300mV @ 10mA, 100mA
Frequency - Transition	-
Current - Collector Cutoff (Max)	50nA
Mounting Type	Through Hole
Package / Case	TO-92
Packaging	Bulk
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MPS6534 MPS6534

MPS6534 Maximum Ratings

S_ymbol	Parameter	Value	Units
V_CEO	Collector-Emitter Voltage	40	V
V_CBO	Collector-Base Voltage	40	V
V_EBO	Emitter-Base Voltage	4.0	V
I_C	Collector Current - Continuous	800	mA
T_J, T_stg	Operating and Storage Junction Temperature Range	-55 to +150

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

MPS6543 General Description

This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 100 mA to 10 mA range. Sourced from Process 47. See MPSH11 for characteristics.

MPS6543 Maximum Ratings

Symbol	Parameter	Value	Units
V_CEO	Collector-Emitter Voltage	25	V
V_CBO	Collector-Base Voltage	35	V
V_EBO	Emitter-Base Voltage	3.0	V
I_C	Collector Current - Continuous	50	mA
T_J, T_stg	Operating and Storage Junction Temperature Range	-55 to +150	°C

^*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

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