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MPSH17, MPSH24, MPSH34

Table of contents:
Info of MPSH17
Info of MPSH24
Info of MPSH34

MPSH17, MPSH24, MPSH34 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-92 D/C:94

MPSH17, MPSH24, MPSH34 Datasheet download

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Part Number: MPSH17

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-92

D/C: 94

Description: TRANSISTOR NPN RF VIDEO TO-92

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MPSH17 Parameters

Technical/Catalog Information	MPSH17
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Frequency - Transition	800MHz
Noise Figure (dB Typ @ f)	6dB @ 200MHz
Current - Collector (Ic) (Max)	-
DC Current Gain (hFE) (Min) @ Ic, Vce	25 @ 5mA, 10V
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	15V
Gain	24dB
Power - Max	350mW
Compression Point (P1dB)	-
Package / Case	TO-92-3, TO-226AA (Straight Leads)
Packaging	Bulk
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	MPSH17 MPSH17 MPSH17OS ND MPSH17OSND MPSH17OS

MPSH17 Maximum Ratings

Parameter	Symbol	Value	Units
CollectorEmitter Voltage	V_CEO	15	Vdc
CollectorBase Voltage	V_CEO	20	Vdc
EmitterBase Voltage	V_CEO	3.0	Vdc
Total Device Dissipation @ T_A= 25 Derate above 25	P_D	350 2.81	mW mW/
Operating and Storage Junction Temperature Range	T_J, T_stg	55 to +150

MPSH24 Parameters

Technical/Catalog Information	MPSH24
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	30V
Current - Collector (Ic) (Max)	50mA
Power - Max	625mW
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 8mA, 10V
Vce Saturation (Max) @ Ib, Ic	-
Frequency - Transition	400MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MPSH24 MPSH24

MPSH24 General Description

This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 A to 20 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving FET mixers. Sourced from Process 47. See MPSH11 for characteristics.

MPSH24 Maximum Ratings

Symbol	Parameter	Value	Units
V_CEO	CollectorEmitter Voltage	30	V
V_CEO	CollectorBase Voltage	40	V
V_CEO	EmitterBase Voltage	4.0	V
I_C	Collector current - Continuous	50	mA
T_J, T_stg	Operating and Storage Junction Temperature Range	-55 ~ +150

*These ratings are limiting values above which the serviceability of any semiconductor device may
be impaired.

NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed
or low duty cycle operations

MPSH34 Parameters

Technical/Catalog Information	MPSH34
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	40V
Current - Collector (Ic) (Max)	50mA
Power - Max	625mW
DC Current Gain (hFE) (Min) @ Ic, Vce	15 @ 20mA, 2V
Vce Saturation (Max) @ Ib, Ic	500mV @ 2mA, 7mA
Frequency - Transition	500MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MPSH34 MPSH34

MPSH34 General Description

This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100A to 20mA range to 300MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving FET mixers.

MPSH34 Maximum Ratings

Symbol	Parameter	Value	Units
V_CEO	CollectorEmitter Voltage	40	V
V_CEO	CollectorBase Voltage	40	V
V_CEO	EmitterBase Voltage	4.0	V
I_C	Collector current - Continuous	50	mA
T_J, T_stg	Junction and Storage Temperature	-55 ~ +150

MPSH34 Features

• Sourced from process 47.
• See MPSH11 for characteristics.

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