MTDAT042G5-3BLL1, MTDF1N02HD, MTDF1N02HDR2 Selling Leads, Datasheet
MFG:LUCENT Package Cooled:BGA D/C:N/A
MTDAT042G5-3BLL1, MTDF1N02HD, MTDF1N02HDR2 Datasheet download
Part Number: MTDAT042G5-3BLL1
MFG: LUCENT
Package Cooled: BGA
D/C: N/A
MTDAT042G5-3BLL1, MTDF1N02HD, MTDF1N02HDR2
- Table of contents:
Info of MTDAT042G5-3BLL1
Info of MTDF1N02HD
Info of MTDF1N02HDR2
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About MTD10N05E
PDF/DataSheet Download
Datasheet: MTD10N05E
File Size: 214905 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
About MTDF1N02HD
PDF/DataSheet Download
Datasheet: MTDF1N02HD
File Size: 224775 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
About MTD10N05E
PDF/DataSheet Download
Datasheet: MTD10N05E
File Size: 214905 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
MTDF1N02HD General Description
Micro8™devices are an advanced series of power MOSFETs which utilize Motorola's High Cell Density HDTMOS process to achieve lowest possible onresistance per silicon area. They are capable of withstanding high energy in the avalanche and commutation modes and the draintosource diode has a very low reverse recovery time. Micro8™devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dcdc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
MTDF1N02HD Maximum Ratings
|
Rating |
Symbol |
Typical |
Max |
Unit | |
| DraintoSource Voltage |
VDSS |
- |
20 |
V | |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
- |
20 |
V | |
| GatetoSource Voltage - Continuous |
VGS |
- |
± 8.0 |
V | |
| 1 inch SQ. FR4 or G10 PCB Figure 1 below 1 die operating Steady State |
Thermal Resistance - Junction to Ambient Total Power Dissipation @ TA = 25°C Linear Derating Factor Drain Current - Continuous @ TA = 25°C Continuous @ TA = 70°C Pulsed Drain Current (1) |
RTHJA PD ID ID IDM |
80 - - - - - |
100 1.25 10 2.8 2.3 23 |
°C/W Watts mW/°C A A A |
| Minimum FR4 or G10 PCB Figure 2 below 1 die operating Steady State |
Thermal Resistance - Junction to Ambient Total Power Dissipation @ TA = 25°C Linear Derating Factor Drain Current - Continuous @ TA = 25°C Continuous @ TA = 70°C Pulsed Drain Current (1) |
RTHJA PD ID ID IDM |
160 - - - - - |
200 0.63 5.0 1.7 1.6 16 |
°C/W Watts mW/°C A A A |
| Minimum FR4 or G10 PCB Figure 2 below 2 die operating Steady State |
Thermal Resistance - Junction to Ambient Total Power Dissipation @ TA = 25°C Linear Derating Factor Drain Current - Continuous @ TA = 25°C Continuous @ TA = 70°C Pulsed Drain Current (1) |
RTHJA PD ID ID IDM |
240 - - - - - |
300 |
°C/W Watts mW/°C A A A |
| Operating and Storage Temperature Range |
TJ, Tstg |
- |
55 to 150 |
°C | |
MTDF1N02HD Features
• Miniature Micro8 Surface Mount Package - Saves Board Space
• Extremely Low Profile (<1.1 mm) for thin applications such as PCMCIA cards
• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive - Can Be Driven by Logic ICs
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Mounting Information for Micro8 Package Provided
• Extremely Low Profile (<1.1 mm) for thin applications such as PCMCIA cards
• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive - Can Be Driven by Logic ICs
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Mounting Information for Micro8 Package Provided
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