MTDF1N03HD, MTDF1P02HD, MTDFIN02HDR2 Selling Leads, Datasheet
Package Cooled:SOP-8 D/C:09+
MTDF1N03HD, MTDF1P02HD, MTDFIN02HDR2 Datasheet download
Part Number: MTDF1N03HD
MFG: --
Package Cooled: SOP-8
D/C: 09+
MTDF1N03HD, MTDF1P02HD, MTDFIN02HDR2
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Info of MTDF1N03HD
Info of MTDF1P02HD
Info of MTDFIN02HDR2
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About MTDF1N03HD
PDF/DataSheet Download
Datasheet: MTDF1N03HD
File Size: 231293 KB
Manufacturer: MOTOROLA [Motorola, Inc]
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About MTDF1P02HD
PDF/DataSheet Download
Datasheet: MTDF1P02HD
File Size: 238035 KB
Manufacturer: MOTOROLA [Motorola, Inc]
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About MTD10N05E
PDF/DataSheet Download
Datasheet: MTD10N05E
File Size: 214905 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
MTDF1N03HD General Description
Micro8™ devices are an advanced series of power MOSFETs which utilize Motorola's High Cell Density HDTMOS process to achieve lowest possible onresistance per silicon area. They are capable of withstanding high energy in the avalanche and commutation modes and the draintosource diode has a very low reverse recovery time. Micro8™ devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dcdc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
MTDF1N03HD Maximum Ratings
Negative sign for PChannel devices omitted for clarity
|
Rating |
Symbol |
Max |
Unit | |
| DraintoSource Voltage |
VDSS |
30 |
V | |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
30 |
V | |
| GatetoSource Voltage - Continuous |
VGS |
± 20 |
V | |
| 1 inch SQ. FR4 or G10 PCB Figure 1 below 1 die operating Steady State |
Thermal Resistance - Junction to Ambient Total Power Dissipation @ TA = 25°C Linear Derating Factor Drain Current - Continuous @ TA = 25°C Continuous @ TA = 70°C Pulsed Drain Current (1) |
RTHJA PD ID ID IDM |
100 1.25 10 2.8 2.2 23 |
°C/W Watts mW/°C A A A |
| Minimum FR4 or G10 PCB Figure 2 below 1 die operating Steady State |
Thermal Resistance - Junction to Ambient Total Power Dissipation @ TA = 25°C Linear Derating Factor Drain Current - Continuous @ TA = 25°C Continuous @ TA = 70°C Pulsed Drain Current (1) |
RTHJA PD ID ID IDM |
200 0.63 5.0 2.0 1.6 16 |
°C/W Watts mW/°C A A A |
| Minimum FR4 or G10 PCB Figure 2 below 2 die operating Steady State |
Thermal Resistance - Junction to Ambient Total Power Dissipation @ TA = 25°C Linear Derating Factor Drain Current - Continuous @ TA = 25°C Continuous @ TA = 70°C Pulsed Drain Current (1) |
RTHJA PD ID ID IDM |
300 0.42 3.33 1.6 1.3 13 |
°C/W Watts mW/°C A A A |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 150 |
°C | |
| Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25°C (VDD =30 Vdc, VGS = 10 Vdc, Peak IL =2.4 Apk, L = 69 mH, RG = 25 ) |
EAS |
200 |
mJ | |
MTDF1N03HD Features
• Miniature Micro8 Surface Mount Package - Saves Board Space
• Extremely Low Profile (<1.1mm) for thin applications such as PCMCIA cards
• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive - Can Be Driven by Logic ICs
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Mounting Information for Micro8 Package Provided
• Extremely Low Profile (<1.1mm) for thin applications such as PCMCIA cards
• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive - Can Be Driven by Logic ICs
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Mounting Information for Micro8 Package Provided
MTDF1P02HD General Description
Micro8™ devices are an advanced series of power MOSFETs which utilize Motorola's High Cell Density HDTMOS process to achieve lowest possible onresistance per silicon area. They are capable of withstanding high energy in the avalanche and commutation modes and the draintosource diode has a very low reverse recovery time. Micro8™ devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dcdc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
MTDF1P02HD Maximum Ratings
|
Rating |
Symbol |
Max |
Unit | |
| DraintoSource Voltage |
VDSS |
20 |
V | |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
20 |
V | |
| GatetoSource Voltage - Continuous |
VGS |
± 8.0 |
V | |
| 1 inch SQ. FR4 or G10 PCB Figure 1 below 1 die operating Steady State |
Thermal Resistance - Junction to Ambient Total Power Dissipation @ TA = 25°C Linear Derating Factor Drain Current - Continuous @ TA = 25°C Continuous @ TA = 70°C Pulsed Drain Current (1) |
RTHJA PD ID ID IDM |
100 1.25 10 2.3 1.9 19 |
°C/W Watts mW/°C A A A |
| Minimum FR4 or G10 PCB Figure 2 below 1 die operating Steady State |
Thermal Resistance - Junction to Ambient Total Power Dissipation @ TA = 25°C Linear Derating Factor Drain Current - Continuous @ TA = 25°C Continuous @ TA = 70°C Pulsed Drain Current (1) |
RTHJA PD ID ID IDM |
200 0.63 5.0 1.6 1.3 13 |
°C/W Watts mW/°C A A A |
| Minimum FR4 or G10 PCB Figure 2 below 2 die operating Steady State |
Thermal Resistance - Junction to Ambient Total Power Dissipation @ TA = 25°C Linear Derating Factor Drain Current - Continuous @ TA = 25°C Continuous @ TA = 70°C Pulsed Drain Current (1) |
RTHJA PD ID ID IDM |
300 0.42 3.33 1.3 1.1 11 |
°C/W Watts mW/°C A A A |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 150 |
°C | |
| Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25°C (VDD = 20 Vdc, VGS = 4.5 Vdc, Peak IL = 3.6 Apk, L = 25 mH, RG = 25 ) |
EAS |
160 |
mJ | |
MTDF1P02HD Features
• Miniature Micro8 Surface Mount Package - Saves Board Space
• Extremely Low Profile (<1.1 mm) for thin applications such as PCMCIA cards
• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive - Can Be Driven by Logic ICs
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Mounting Information for Micro8 Package Provided
• Extremely Low Profile (<1.1 mm) for thin applications such as PCMCIA cards
• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive - Can Be Driven by Logic ICs
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Mounting Information for Micro8 Package Provided
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