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MTE3055, MTE30N50E, MTE32040001BWG

MTE3055, MTE30N50E, MTE32040001BWG Selling Leads, Datasheet

MFG:ST  Package Cooled:05+  D/C:09+

MTE3055, MTE30N50E, MTE32040001BWG Picture

MTE3055, MTE30N50E, MTE32040001BWG Datasheet download

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Part Number: MTE3055

 

MFG: ST

Package Cooled: 05+

D/C: 09+

 

 

 
 
 
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  • MTE1122/P

  • Vendor: Microchip Pack: DIP D/C: 09+& Qty: 2000 Note: 、!  Adddate: 2024-03-28
  • Inquire Now
  • Jing Li Yuen Electronics Co., Ltd.   China
    Contact: Ms.XianFengZhang  
    Tel: 0086-0755-33270467
    Fax: 0086-0755-82708963
    (230)

About MTE100

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Datasheet: MTE100

File Size: 71972 KB

Manufacturer: MARKTECH [Marktech Corporate]

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MTE30N50E Suppliers

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  • MTE1122/P

  • Vendor: Microchip Pack: DIP D/C: 09+& Qty: 2000 Note: 、!  Adddate: 2024-03-28
  • Inquire Now
  • Jing Li Yuen Electronics Co., Ltd.   China
    Contact: Ms.XianFengZhang  
    Tel: 0086-0755-33270467
    Fax: 0086-0755-82708963
    (230)

About MTE30N50E

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Datasheet: MTE30N50E

File Size: 234578 KB

Manufacturer: MOTOROLA [Motorola, Inc]

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MTE32040001BWG Suppliers

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  • MTE1122/P

  • Vendor: Microchip Pack: DIP D/C: 09+& Qty: 2000 Note: 、!  Adddate: 2024-03-28
  • Inquire Now
  • Jing Li Yuen Electronics Co., Ltd.   China
    Contact: Ms.XianFengZhang  
    Tel: 0086-0755-33270467
    Fax: 0086-0755-82708963
    (230)

About MTE100

PDF/DataSheet Download

Datasheet: MTE100

File Size: 71972 KB

Manufacturer: MARKTECH [Marktech Corporate]

Download : Click here to Download

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MTE30N50E General Description

This advanced TMOS EFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new energy design also offers a draintosource diode with fast recovery time. Designed for high voltage, high speed switching applications in power supplies, PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.

MTE30N50E Maximum Ratings

Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
500
Vdc
DraintoGate Voltage (RGS = 1.0 M)
VDGR
500
Vdc
GatetoSource Voltage - Continuous
- NonRepetitive (tp 10 ms)
VGS
VGSM
± 20
± 40
Vdc
Vpk
Drain Current - Continuous @ 25°C
- Continuous @ 100°C
- Single Pulse (tp 10 s)
ID
ID
IDM
30
12
80
Adc

Apk

Total Power Dissipation@ 25°C
Derate above 25°C
PD
250
2.0
Watts
W/°C
Operating and Storage Temperature Range
TJ, Tstg
55 to 150
°C
Single Pulse DraintoSource Avalanche Energy TJ = 25°C
(VDD =100 Vdc, VGS = 10Vdc, PEAK IL =30Apk, L = 10mH, RG = 25)
EAS

300
mJ
Thermal Resistance - Junction to Case
- Junction to Ambient
RJC
RJA
0.5
62.5
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds
TL
260
°C
This document contains information on a new product. Specifications and information herein are subject to change without notice.
EFET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
ISOTOP is a trademark of SGSTHOMSON Microelectronics.

MTE30N50E Features

• 2500 V RMS Isolated ISOTOP Package
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• Very Low Internal Parasitic Inductance
• IDSS and VDS(on) Specified at Elevated Temperature
• U.L. Recognized, File #E69369

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