MTSF3203, MTSF3203R2G, MTSF3N02HD Selling Leads, Datasheet
MFG:ON Package Cooled:SOP8 D/C:09+
MTSF3203, MTSF3203R2G, MTSF3N02HD Datasheet download
Part Number: MTSF3203
MFG: ON
Package Cooled: SOP8
D/C: 09+
MTSF3203, MTSF3203R2G, MTSF3N02HD
- Table of contents:
Info of MTSF3203
Info of MTSF3203R2G
Info of MTSF3N02HD
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About MTSF3203
PDF/DataSheet Download
Datasheet: MTSF3203
File Size: 137704 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
About MTS103
PDF/DataSheet Download
Datasheet: MTS103
File Size: 128252 KB
Manufacturer:
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About MTSF3N02HD
PDF/DataSheet Download
Datasheet: MTSF3N02HD
File Size: 240911 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
MTSF3203 General Description
Micro8™ devices are an advanced series of power MOSFETs which utilize Motorola's High Cell Density HDTMOS process to achieve lowest possible onresistance per silicon area. They are capable of withstanding high energy in the avalanche and commutation modes and the draintosource diode has a very low reverse recovery time. Micro8™devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dcdc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
MTSF3203 Maximum Ratings
|
Rating |
Symbol |
Value |
Unit | |
| DraintoSource Voltage |
VDSS |
20 |
V | |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
20 |
V | |
| GatetoSource Voltage - Continuous |
VGS |
± 12 |
V | |
| 1 inch SQ. FR4 or G10 PCB Figure 1 below Steady State |
Thermal Resistance - Junction to Ambient Total Power Dissipation @ TA = 25°C Linear Derating Factor Drain Current - Continuous @ TA = 25°C Continuous @ TA = 70°C Pulsed Drain Current (1) |
RTHJA PD ID ID IDM |
70 1.79 14.29 4.9 3.9 24.4 |
°C/W Watts mW/°C A A A |
| Minimum FR4 or G10 PCB Figure 2 below Steady State |
Thermal Resistance - Junction to Ambient Total Power Dissipation @ TA = 25°C Linear Derating Factor Drain Current - Continuous @ TA = 25°C Continuous @ TA = 70°C Pulsed Drain Current (1) |
RTHJA PD ID ID IDM |
160 0.78 6.25 3.2 2.5 16 |
°C/W Watts mW/°C A A A |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 150 |
°C | |
| Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25°C (VDD =30 Vdc, VGS = 5.0 Vdc, Peak IL =4.9 Apk, L = TDBmH, RG = 25 ) |
EAS |
TBD |
mJ | |
MTSF3203 Features
• Miniature Micro8 Surface Mount Package - Saves Board Space
• Extremely Low Profile (<1.1 mm) for thin applications such as PCMCIA cards
• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive - Can Be Driven by Logic ICs
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Mounting Information for Micro8 Package Provided
• Extremely Low Profile (<1.1 mm) for thin applications such as PCMCIA cards
• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive - Can Be Driven by Logic ICs
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Mounting Information for Micro8 Package Provided
MTSF3203 Connection Diagram
MTSF3N02HD General Description
Micro8™ devices are an advanced series of power MOSFETs which utilize Motorola's High Cell Density HDTMOS process to achieve lowest possible onresistance per silicon area. They are capable of withstanding high energy in the avalanche and commutation modes and the draintosource diode has a very low reverse recovery time. Micro8™ devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dcdc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
MTSF3N02HD Maximum Ratings
|
Rating |
Symbol |
Value |
Unit | |
| DraintoSource Voltage |
VDSS |
20 |
V | |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
20 |
V | |
| GatetoSource Voltage - Continuous |
VGS |
± 8.0 |
V | |
| 1 inch SQ. FR4 or G10 PCB Figure 1 below Steady State |
Thermal Resistance - Junction to Ambient Total Power Dissipation @ TA = 25°C Linear Derating Factor Drain Current - Continuous @ TA = 25°C Continuous @ TA = 70°C Pulsed Drain Current (1) |
RTHJA PD ID ID IDM |
70 1.79 14.29 6.1 4.9 49 |
°C/W Watts mW/°C A A A |
| Minimum FR4 or G10 PCB Figure 2 below Steady State |
Thermal Resistance - Junction to Ambient Total Power Dissipation @ TA = 25°C Linear Derating Factor Drain Current - Continuous @ TA = 25°C Continuous @ TA = 70°C Pulsed Drain Current (1) |
RTHJA PD ID ID IDM |
160 0.78 6.25 4.0 3.2 32 |
°C/W Watts mW/°C A A A |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 150 |
°C | |
MTSF3N02HD Features
• Miniature Micro8 Surface Mount Package - Saves Board Space
• Extremely Low Profile (<1.1mm) for thin applications such as PCMCIA cards
• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive - Can Be Driven by Logic ICs
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Mounting Information for Micro8 Package Provided
• Extremely Low Profile (<1.1mm) for thin applications such as PCMCIA cards
• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive - Can Be Driven by Logic ICs
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Mounting Information for Micro8 Package Provided
MTSF3N02HD Connection Diagram
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