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MTSF1P02HDR2

Features: • Miniature Micro8 Surface Mount Package - Saves Board Space• Extremely Low Profile (<1.1mm) for thin applications such as PCMCIA cards• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life• Logic Level Gate Drive - Can Be Driven by Logic ICs&#...

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SeekIC No. : 004430878 Detail

MTSF1P02HDR2: Features: • Miniature Micro8 Surface Mount Package - Saves Board Space• Extremely Low Profile (<1.1mm) for thin applications such as PCMCIA cards• Ultra Low RDS(on) Provides Hig...

MTSF1P02HDR2 Data Sheet

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Part Number:
MTSF1P02HDR2
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
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Product Details

Description



Features:

• Miniature Micro8 Surface Mount Package - Saves Board Space
• Extremely Low Profile (<1.1mm) for thin applications such as
  PCMCIA cards
• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive - Can Be Driven by Logic ICs
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Mounting Information for Micro8 Package Provided


Specifications

Rating Symbol Value Unit
DraintoSource Voltage VDSS 20 Vdc
DraintoGate Voltage (RGS = 1.0 MW) VDGR 20 Vdc
GatetoSource Voltage - Continuous
 VGS
 ± 8.0
 Vdc
Vpk
Drain Current - Continuous
- Continuous @ 100°C
- Single Pulse (tp 10 ms)		 ID
ID
IDM		 1.8
1.6
14.4		 Adc

Apk
Total Power Dissipation @ TA = 25°C (1)
Linear Derating Factor (1)		 PD 1.8
14.3		 Watts
mW/°C
Total Power Dissipation @ TA = 25°C (2)
Linear Derating Factor (2)		 PD 0.78
6.25		 Watts
mW/°C
Operating and Storage Temperature Range TJ, Tstg 55 to 150 °C
(1) When mounted on 1 inch square FR4 or G10 board (VGS = 4.5 V, @ Steady State)
(2) When mounted on minimum recommended FR4 or G10 board (VGS = 4.5 V, @ Steady State)
(3) Repetitive rating; pulse width limited by maximum junction temperature.


Description

MTSF1P02HDR2 is an advanced series of power MOSFETs which utilize Motorola's High Cell Density HDTMOS process to achieve lowest possible onresistance per silicon area. The MTSF1P02HDR2 is capable of withstanding high energy in the avalanche and commutation modes and the draintosource diode has a very low reverse recovery time. MTSF1P02HDR2 is designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dcdc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. The MTSF1P02HDR2 can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.




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