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MWI60-12T6K, MWI75-12E8, MWI80-12T6K

Table of contents:
Info of MWI60-12T6K
Info of MWI75-12E8
Info of MWI80-12T6K

MWI60-12T6K, MWI75-12E8, MWI80-12T6K Selling Leads, Datasheet

MFG:IXYS Category:Discrete Semiconductor Products Package Cooled:Module D/C:2008

MWI60-12T6K, MWI75-12E8, MWI80-12T6K Picture

MWI60-12T6K, MWI75-12E8, MWI80-12T6K Datasheet download

Five Points

Part Number: MWI60-12T6K

Category: Discrete Semiconductor Products

MFG: IXYS

Package Cooled: Module

D/C: 2008

Description: MOD IGBT SIXPACK RBSOA 1200V E1

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MWI75-12E8 Maximum Ratings

Symbol	Conditions	Maximum Ratings
V_CES	T_VJ= 25 to 150	1200	V
V_GES		±20	V
I_C25I_C80	T_C = 25 T_C = 80	130 90	A A
RBSOA	V_GE = ±15 V; R_G = 15; T_VJ= 125 Clamped inductive load; L = 100 µH	I_CM = 150 V_CEK V_CES	A
t_SC (SCSOA)	V_CE= 900V; V_GE = ±15 V; R_G = 15; T_VJ = 125 non-repetitive	10	µs
P_tot	T_C= 25	500	W

MWI75-12E8 Features

• IGBTs
    - low saturation voltage
    - positive temperature coefficient
    - fast switching
    - short tail current for optimized performance also in resonant circuits
• HiPerFREDTM diode:
    - fast reverse recovery
    - low operating forward voltage
    - low leakage current
• Industry Standard Package
    - solderable pins for PCB mounting
    - isolated copper base plate

MWI75-12E8 Typical Application

• AC drives
• power supplies with power factor correction

MWI80-12T6K Parameters

Technical/Catalog Information	MWI80-12T6K
Vendor	IXYS
Category	Discrete Semiconductor Products
Configuration	Three Phase Inverter
Input	Standard
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	80A
Power - Max	270W
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 50A
Current - Collector Cutoff (Max)	1mA
NTC Thermistor	Yes
Input Capacitance (Cies) @ Vce	3.6nF @ 25V
Mounting Type	Chassis Mount
Package / Case	E1
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MWI80 12T6K MWI8012T6K

MWI80-12T6K Maximum Ratings

Symbol	Conditions	Maximum Ratings
V_CES	T_VJ= 25 to 150	1200	V
V_GES		±20	V
I_C25I_C80	T_C = 25 T_C = 80	80 56	A A
RBSOA	V_GE = ±15 V; R_G = 18; T_VJ= 125 Clamped inductive load; L = 100 µH	120 V_CES	A
t_SC (SCSOA)	V_CE= 900V; V_GE = ±15 V; R_G = 18; T_VJ = 125 SCSOA; non-repetitive	10	µs
P_tot	T_C= 25	270	W

MWI80-12T6K Features

• Trench IGBTs
    - low saturation voltage
    - positive temperature coefficient for easy paralleling
    - fast switching
    - short tail current for optimized performance also in resonant circuits
• HiPerFREDTM diode:
    - fast reverse recovery
    - low operating forward voltage
    - low leakage current
• Industry Standard Package
    - solderable pins for PCB mounting
    - isolated copper base plate

MWI80-12T6K Typical Application

• AC drives
• power supplies with power factor correction

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