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NAND08GW3B2A, NAND08GW3B2CN6E, NAND08GW3B4CZL6

NAND08GW3B2A, NAND08GW3B2CN6E, NAND08GW3B4CZL6 Selling Leads, Datasheet

MFG:Numonyx/ST Micro  Category:Integrated Circuits (ICs)  Package Cooled:SLC  D/C:07+

NAND08GW3B2A, NAND08GW3B2CN6E, NAND08GW3B4CZL6 Picture

NAND08GW3B2A, NAND08GW3B2CN6E, NAND08GW3B4CZL6 Datasheet download

Five Points

Part Number: NAND08GW3B2A

Category: Integrated Circuits (ICs)

MFG: Numonyx/ST Micro

Package Cooled: SLC

D/C: 07+

Description: IC FLASH NAND 8GBIT 48-TSOP

 

 
 
 
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  • NAND FLASH

  •   Adddate: 2024-04-28
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  •   Hong
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  • NAND01GR3B2CZA6E

  • Vendor: Numonyx Pack: FBGA D/C: 10+& Qty: ?37800 Note: New&original,Myself Stock!  Adddate: 2024-04-28
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  • hk nater tech limited   China
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  • NAND01GW3B2BN6E

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  • Skyeast Intl. Ltd.   China
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  • NAND01GW3B2CN6E

  • Vendor: Numonyx Pack: TSOP D/C: 10+& Qty: 5760 Note: 960/,96/TRAY  Adddate: 2024-04-28
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  • Sunny Technology   Hong
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About NAND08GW3B2A

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Datasheet: NAND08GW3B2A

File Size: 513687 KB

Manufacturer: STMICROELECTRONICS [STMicroelectronics]

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  • NAND FLASH

  •   Adddate: 2024-04-28
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  •   Hong
    Contact: Ms.Vivi   MSN:vivi.fu@nextron.com.hk
    Tel: 086-0755-13632642640
    Fax:
    (5)
  • NAND01GR3B2CZA6E

  • Vendor: Numonyx Pack: FBGA D/C: 10+& Qty: ?37800 Note: New&original,Myself Stock!  Adddate: 2024-04-28
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  • hk nater tech limited   China
    Contact: Mr.wang   MSN:hsdwxl@hotmail.com
    Tel: 0086-755-61522172
    Fax: 0086-755-6152171
    (84)
  • NAND01GW3B2BN6E

  • D/C: 07+& Qty: 88032 Note: original stk  Adddate: 2024-04-28
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  • Skyeast Intl. Ltd.   China
    Contact: Mr.RichardLiu  
    Tel: 86--755-83276226
    Fax: 86--755--83215205
    (0)

About NAND08GW3B2CN6E

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Datasheet: NAND08GW3B2CN6E

File Size: 1746876 KB

Manufacturer: NUMONYX [Numonyx B.V]

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NAND08GW3B4CZL6 Suppliers

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  • NAND FLASH

  •   Adddate: 2024-04-28
  • Inquire Now
  •   Hong
    Contact: Ms.Vivi   MSN:vivi.fu@nextron.com.hk
    Tel: 086-0755-13632642640
    Fax:
    (5)
  • NAND01GR3B2CZA6E

  • Vendor: Numonyx Pack: FBGA D/C: 10+& Qty: ?37800 Note: New&original,Myself Stock!  Adddate: 2024-04-28
  • Inquire Now
  • hk nater tech limited   China
    Contact: Mr.wang   MSN:hsdwxl@hotmail.com
    Tel: 0086-755-61522172
    Fax: 0086-755-6152171
    (84)
  • NAND01GW3B2BN6E

  • D/C: 07+& Qty: 88032 Note: original stk  Adddate: 2024-04-28
  • Inquire Now
  • Skyeast Intl. Ltd.   China
    Contact: Mr.RichardLiu  
    Tel: 86--755-83276226
    Fax: 86--755--83215205
    (0)
  • NAND01GW3B2CN6E

  • Vendor: Numonyx Pack: TSOP D/C: 10+& Qty: 5760 Note: 960/,96/TRAY  Adddate: 2024-04-28
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  • Sunny Technology   Hong
    Contact: Ms.Annie   MSN:sunnytechnology@hotmail.com
    Tel: 86-852-65159660
    Fax: --
    (8)

About NAND01G-A

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Datasheet: NAND01G-A

File Size: 938589 KB

Manufacturer: STMICROELECTRONICS [STMicroelectronics]

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NAND08GW3B2A General Description

The NAND Flash 2112 Byte/ 1056 Word Page is a family of non-volatile Flash memories that uses NAND cell technology. The NAND04GW3B2B and NAND08GW3B2A have a density of 4 Gbits and 8 Gbits, respectively. They operate from a 3V voltage supply. The size of a Page is 2112 Bytes (2048 + 64 spare).

The address lines are multiplexed with the Data Input/Output signals on a multiplexed x8 Input/Output bus. This interface reduces the pin count and makes it possible to migrate to other densities without changing the footprint.

Each block can be programmed and erased over 100,000 cycles. To extend the lifetime of NAND Flash devices it is strongly recommended to implement an Error Correction Code (ECC).

The device has hardware and software security features:

A Write Protect pin is available to give a hardware protection against program and erase operations.
A Block Locking scheme is available to provide user code and/or data protection.

The device features an open-drain Ready/Busy output that can be used to identify if the Program/Erase/Read (P/E/R) Controller is currently active. The use of an open-drain output allows the Ready/Busy pins from several memories to be connected to a single pull-up resistor.

A Copy Back Program command is available to optimize the management of defective blocks. When a Page Program operation fails, the data can be programmed in another page without having to resend the data to be programmed.

The NAND04GW3B2B and NAND08GW3B2A have Cache Program and Cache Read features which improve the program and read throughputs for large files. During Cache Programming, the device loads the data in a Cache Register while the previous data is transferred to the Page Buffer and programmed into the memory array. During Cache Reading, the device loads the data in a Cache Register while the previous data is transferred to the I/O Buffers to be read.

The device has the Chip Enable Don't Care feature, which allows code to be directly downloaded by a microcontroller, as Chip Enable transitions during the latency time do not stop the read operation.

The devices have the option of a Unique Identifier (serial number), which allows each device to be uniquely identified.

The Unique Identifier options is subject to an NDA (Non Disclosure Agreement) and so not described in the datasheet. For more details of this option contact your nearest ST Sales office.

The device is available in a TSOP48 (12 x 20mm) package. In order to meet environmental requirements, ST offers the NAND04GW3B2B and NAND08GW3B2A in ECOPACK® package. ECOPACK packages are Lead-free. The category of second Level Interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark.

NAND08GW3B2A Maximum Ratings

Symbol Parameter Value Unit
Min Max
TBIAS Temperature Under Bias -50 125 °C
TSTG Storage Temperature -65 150 °C
VIO(1) Input or Output Voltage 0.6 4.6 V
VDD Supply Voltage 0.6 4.6 V

NAND08GW3B2A Features

High density NAND Flash Memory
up to 8 Gbit memory array
Up to 256 Mbit spare area
Cost effective solution for mass storage applications
NAND Interface
x8 bus width
Multiplexed Address/ Data
Supply voltage
3.0V device: VDD = 2.7 to 3.6V
Page size
(2048 + 64 spare) Bytes
Block size
(128K + 4K spare) Bytes
Page Read/Program
Random access: 25s (max)
Sequential access: 30ns (min)
Page program time: 200s (typ)
Copy Back Program mode
Fast page copy without external buffering
Cache Program and Cache Read modes
Internal Cache Register to improve the program and read throughputs
Fast Block Erase
Block erase time: 2ms (typ)
Status Register
Electronic Signature
Chip Enable 'don't care'
for simple interface with microcontroller
Serial Number option
Data protection
Hardware and Software Block Locking
Hardware Program/Erase locked during Power transitions
Data integrity
100,000 Program/Erase cycles
10 years Data Retention
ECOPACK® package
Development tools
Error Correction Code software and
hardware models
Bad Blocks Management and Wear Leveling algorithms
File System OS Native reference software
Hardware simulation models

NAND08GW3B2A Connection Diagram

NAND08GW3B2CN6E Parameters

Technical/Catalog InformationNAND08GW3B2CN6E
VendorNumonyx/ST Micro
CategoryIntegrated Circuits (ICs)
Memory TypeFLASH - Nand
Memory Size8G (1G x 8)
Speed-
InterfaceParallel
Package / Case48-TSOP
PackagingTray
Voltage - Supply2.7 V ~ 3.6 V
Operating Temperature-40°C ~ 85°C
Format - MemoryFLASH
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NAND08GW3B2CN6E
NAND08GW3B2CN6E

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