NAND01G-AAZ3E

The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses the Single Level Cell (SLC) NAND cell technology. NAND01G-AAZ3E is referred to as the Small Page family. The NAND01G-AAZ3E devices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on whether the device has a x8 or x16 bus width.

The address lines of NAND01G-AAZ3E are multiplexed with the Data Input/ Output signals on a multiplexed x8 or x16 Input/ Output bus. This interface reduces the pin count and makes NAND01G-AAZ3E possible to migrate to other densities without changing the footprint. Each block can be programmed and erased over 100,000 cycles. To extend the lifetime of NAND Flash devices it is strongly recommended to implement an Error Correction Code (ECC).

A Write Protect pin is available to give a hardware protection against program and erase operations. The NAND01G-AAZ3E devices feature an open-drain Ready/Busy output that can be used to identify if the Program/ Erase/Read (P/E/R) Controller is currently active. The use of an open-drain output allows the Ready/ Busy pins from several memories to be connected to a single pull-up resistor. A Copy Back command is available to optimize the management of defective blocks. When a Page Program operation fails, the data can be programmed in another page without having to resend the data to be programmed.