NDP510AE, NDP510B, NDP510BE Selling Leads, Datasheet
MFG:KA Package Cooled:TO-220 D/C:TO
NDP510AE, NDP510B, NDP510BE Datasheet download
Part Number: NDP510AE
MFG: KA
Package Cooled: TO-220
D/C: TO
NDP510AE, NDP510B, NDP510BE
- Table of contents:
Info of NDP510AE
Info of NDP510B
Info of NDP510BE
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About NDP510AE
PDF/DataSheet Download
Datasheet: NDP510AE
File Size: 74239 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About NDP510B
PDF/DataSheet Download
Datasheet: NDP510B
File Size: 74239 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About NDP510BE
PDF/DataSheet Download
Datasheet: NDP510BE
File Size: 74239 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
NDP510AE General Description
These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
NDP510AE Maximum Ratings
|
Symbol |
Parameter |
NDP510A NDP510AE NDB510A NDB510AE |
NDP510B NDP510BE NDB510B NDB510BE |
Units |
|
VDSS |
Drain-Source Voltage |
100 |
V | |
|
VDGR |
Drain-Gate Voltage (RGS < 1 M) |
100 |
V | |
|
VGSS |
Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 s) |
± 20 |
V | |
|
± 40 | ||||
|
ID |
Drain Current - Continuous - Pulsed |
15 |
13 |
A |
|
60 |
52 | |||
|
PD |
Total Power Dissipation Derate above 25°C |
75 |
W | |
|
0.5 |
W/ | |||
|
TJ,TSTG |
Operating and Storage Temperature Range |
-65 to 175 |
||
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
275 |
||
NDP510AE Features
`15 and 13A, 100V. RDS(ON) = 0.12 and 0.15.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design (3 million/in²) for extremely low RDS(ON).
`TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design (3 million/in²) for extremely low RDS(ON).
`TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
NDP510B General Description
These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
NDP510B Maximum Ratings
|
Symbol |
Parameter |
NDP510A NDP510AE NDB510A NDB510AE |
NDP510B NDP510BE NDB510B NDB510BE |
Units |
|
VDSS |
Drain-Source Voltage |
100 |
V | |
|
VDGR |
Drain-Gate Voltage (RGS < 1 M) |
100 |
V | |
|
VGSS |
Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 s) |
± 20 |
V | |
|
± 40 | ||||
|
ID |
Drain Current - Continuous - Pulsed |
15 |
13 |
A |
|
60 |
52 | |||
|
PD |
Total Power Dissipation Derate above 25°C |
75 |
W | |
|
0.5 |
W/ | |||
|
TJ,TSTG |
Operating and Storage Temperature Range |
-65 to 175 |
||
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
275 |
||
NDP510B Features
`15 and 13A, 100V. RDS(ON) = 0.12 and 0.15.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design (3 million/in²) for extremely low RDS(ON).
`TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design (3 million/in²) for extremely low RDS(ON).
`TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
NDP510BE General Description
These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
NDP510BE Maximum Ratings
|
Symbol |
Parameter |
NDP510A NDP510AE NDB510A NDB510AE |
NDP510B NDP510BE NDB510B NDB510BE |
Units |
|
VDSS |
Drain-Source Voltage |
100 |
V | |
|
VDGR |
Drain-Gate Voltage (RGS < 1 M) |
100 |
V | |
|
VGSS |
Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 s) |
± 20 |
V | |
|
± 40 | ||||
|
ID |
Drain Current - Continuous - Pulsed |
15 |
13 |
A |
|
60 |
52 | |||
|
PD |
Total Power Dissipation Derate above 25°C |
75 |
W | |
|
0.5 |
W/ | |||
|
TJ,TSTG |
Operating and Storage Temperature Range |
-65 to 175 |
||
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
275 |
||
NDP510BE Features
`15 and 13A, 100V. RDS(ON) = 0.12 and 0.15.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design (3 million/in²) for extremely low RDS(ON).
`TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design (3 million/in²) for extremely low RDS(ON).
`TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
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