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NDP708BE

Features: ·60 and 54A, 80V. RDS(ON) = 0.022 and 0.025W.·Critical DC electrical parameters specified at elevated temperature.·Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.·175°C maximum junction temperature rating.·High density cell desi...

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NDP708BE: Features: ·60 and 54A, 80V. RDS(ON) = 0.022 and 0.025W.·Critical DC electrical parameters specified at elevated temperature.·Rugged internal source-drain diode can eliminate the need for an external...

NDP708BE Data Sheet

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Part Number:
NDP708BE
Supply Ability:
5000

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  • 1~5000
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  • 15 Days
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Product Details

Description



Features:

·60 and 54A, 80V. RDS(ON) = 0.022 and 0.025W.
·Critical DC electrical parameters specified at elevated temperature.
·Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
·175°C maximum junction temperature rating.
·High density cell design (3 million/in²) for extremely low RDS(ON).
·TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.


Pinout

Connection Diagram


Specifications

Symbol Parameter NDP708A NDP708AE
NDB708A NDB708AE		 NDP708B NDP708BE
NDB708B NDB708BE		 Units
VDSS
VDGR
VGSS

ID

PD

TJ,TSTG
TL		 Drain-Source Voltage
Drain-Gate Voltage (RGS < 1 M)
Gate-Source Voltage - Continuous
- Nonrepetitive (tP < 50 s)
Drain Current - Continuous
- Pulsed
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering
purposes, 1/8" from case for 5 seconds
80
80
±20
±40
V
V
V
V
A
A
W
W/°C
°C
°C
60
180
54
162
150
1
-65 to 175
275



Description

These N-channel enhancement mode power field effect transistors NDP708BE are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. NDP708BE is particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.




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