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NDP6020, NDP6020P, NDP6030

Table of contents:
Info of NDP6020
Info of NDP6020P
Info of NDP6030

NDP6020, NDP6020P, NDP6030 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-220 D/C:09+

NDP6020, NDP6020P, NDP6030 Datasheet download

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Part Number: NDP6020P

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-220

D/C: 09+

Description: MOSFET P-CHAN 20V 24A TO-220

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NDP6020 General Description

These logic level N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

NDP6020 Maximum Ratings

Symbol	Parameter	NDP6020	NDB6020	Units
V_DSS	Drain-Source Voltage	20		V
V_DGR	Drain-Gate Voltage (R_GS 1 M)	20		V
V_GSS	Gate-Source Voltage - Continuous	±8		V
I_D	Drain Current - Continuous - Pulsed	35		A
		100
P_D	Total Power Dissipation @ T_C = 25°C Derate above 25°C	60		W
		0.4		W/
T_J,T_STG	Operating and Storage Temperature Range	-65 to 175

NDP6020 Features

`35 A, 20 V. R_DS(ON) = 0.023 @ V_GS= 4.5 V
R_DS(ON) = 0.028 @ V_GS= 2.7 V.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design for extremely low R_DS(ON).
`TO-220 and TO-263 (D²PAK) package for both through hole and surface mount applications.

NDP6020P Parameters

Technical/Catalog Information	NDP6020P
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	24A
Rds On (Max) @ Id, Vgs	50 mOhm @ 12A, 4.5V
Input Capacitance (Ciss) @ Vds	1590pF @ 10V
Power - Max	60W
Packaging	Tube
Gate Charge (Qg) @ Vgs	35nC @ 5V
Package / Case	TO-220
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NDP6020P NDP6020P

NDP6020P General Description

These logic level P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

NDP6020P Maximum Ratings

Symbol	Parameter	NDP6020P	NDB6020P	Units
V_DSS	Drain-Source Voltage	-20		V
V_GSS	Gate-Source Voltage - Continuous	±8		V
I_D	Drain Current - Continuous - Pulsed	-24		A
		-70
P_D	Total Power Dissipation @ TC = 25°C Derate above 25°C	60		W
		0.4		W/
T_J,T_STG	Operating and Storage Temperature Range	-65 to 175

NDP6020P Features

`-24 A, -20 V. R_DS(ON) = 0.05 @ V_GS= -4.5 V.
R_DS(ON) = 0.07 @ V_GS= -2.7 V.
R_DS(ON) = 0.075 @ V_GS= -2.5 V.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design for extremely low R_DS(ON).
`TO-220 and TO-263 (D²PAK) package for both through hole and surface mount applications.

NDP6030 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC/DC converters and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

NDP6030 Maximum Ratings

Symbol	Parameter	NDP6030	NDB6030	Units
V_DSS	Drain-Source Voltage	30		V
V_DGR	Drain-Gate Voltage (R_GS < 1 M)	30		V
V_GSS	Gate-Source Voltage - Continuous	±20		V
I_D	Drain Current - Continuous - Pulsed	46		A
		135
P_D	Total Power Dissipation @ T_C = 25°C Derate above 25°C	75		W
		0.5		W/
T_J,T_STG	Operating and Storage Temperature Range	-65 to 175

NDP6030 Features

·46 A, 30 V. R_DS(ON) = 0.018 @ V_GS=10 V.
·Critical DC electrical parameters specified at elevated temperature.
·Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
·175°C maximum junction temperature rating.
·High density cell design for extremely low R_DS(ON).
·TO-220 and TO-263 (D²PAK) package for both through hole and surface mount applications

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