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NDP6030AL, NDP6030L, NDP6030PL

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Info of NDP6030AL
Info of NDP6030L
Info of NDP6030PL

NDP6030AL, NDP6030L, NDP6030PL Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-220 D/C:08+/09+

NDP6030AL, NDP6030L, NDP6030PL Datasheet download

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Part Number: NDP6030PL

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-220

D/C: 08+/09+

Description: MOSFET P-CHAN 30V 30A TO-220

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NDP6030L General Description

These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.

NDP6030L Maximum Ratings

Symbol	Parameter	NDP603AL	NDB603AL	Units
V_DSS	Drain-Source Voltage	30		V
V_GSS	Gate-Source Voltage - Continuous	± 16		V
I_D	Drain Current - Continuous - Pulsed	52		A
		156
P_D	Total Power Dissipation @ T_C = 25°C Derate above 25°C	75		W
		0.5		W/
T_J,T_STG	Operating and Storage Temperature Range	-65 to 175
T_L	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	275

NDP6030L Features

`52 A, 30 V. R_DS(ON) = 0.0135 @ V_GS=10 V
R_DS(ON) = 0.020 @ V_GS=4.5 V.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`High density cell design for extremely low R_DS(ON).
`175°C maximum junction temperature rating.

NDP6030PL Parameters

Technical/Catalog Information	NDP6030PL
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	30A
Rds On (Max) @ Id, Vgs	25 mOhm @ 19A, 10V
Input Capacitance (Ciss) @ Vds	1570pF @ 15V
Power - Max	75W
Packaging	Tube
Gate Charge (Qg) @ Vgs	36nC @ 5V
Package / Case	TO-220
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NDP6030PL NDP6030PL

NDP6030PL General Description

These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.

NDP6030PL Maximum Ratings

Symbol	Parameter	NDP6030PL	NDB6030PL	Units
V_DSS	Drain-Source Voltage	-30		V
V_GSS	Gate-Source Voltage - Continuous	± 16		V
I_D	Drain Current - Continuous - Pulsed	-30		A
		-90
P_D	Total Power Dissipation @ T_C = 25°C Derate above 25°C	75		W
		0.5		W/
T_J,T_STG	Operating and Storage Temperature Range	-65 to 175
T_L	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	275
T_J,T_STG	Operating and Storage Temperature Range	-65 to 175

NDP6030PL Features

`-30 A, -30 V. R_DS(ON) = 0.042 @ V_GS= -4.5 V
R_DS(ON) = 0.025 @ V_GS= -10 V.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`High density cell design for extremely low R_DS(ON).
`175°C maximum junction temperature rating.

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