MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO220 D/C:08+
NDP603AL, NDP605, NDP6050 Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: TO220
D/C: 08+
Description: MOSFET N-CH 30V 25A TO-220AB
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PDF/DataSheet Download
Datasheet: NDP603AL
File Size: 67281 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NDP6050
File Size: 68075 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NDP6050
File Size: 68075 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | NDP603AL |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 25A |
| Rds On (Max) @ Id, Vgs | 22 mOhm @ 25A, 10V |
| Input Capacitance (Ciss) @ Vds | 1100pF @ 15V |
| Power - Max | 50W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 40nC @ 10V |
| Package / Case | TO-220AB |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NDP603AL NDP603AL |
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.
|
Symbol |
Parameter |
NDP603AL |
NDB603AL |
Units |
| VDSS | Drain-Source Voltage |
30 |
V | |
| VGSS | Gate-Source Voltage - Continuous |
± 20 |
V | |
| ID | Drain Current - Continuous - Pulsed |
25 (Note 1) |
A | |
|
100 | ||||
| PD | Total Power Dissipation @ TC = 25°C Derate above 25°C |
50 |
W | |
|
0.4 |
W/ | |||
| TJ,TSTG | Operating and Storage Temperature Range |
-65 to 175 |
||
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
275 |
||
`25A, 30V. RDS(ON) = 0.022 @ VGS=10V.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`High density cell design for extremely low RDS(ON).
`175°C maximum junction temperature rating.
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
| Symbol | Parameter | NDP6050 | NDB6050 |
Units |
| VDSS | Drain-Source Voltage |
50 |
V | |
| VDGR | Drain-Gate Voltage (RGS 1 M) |
50 |
V | |
| VGSS | Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 s) |
± 20 |
V | |
|
± 40 | ||||
| ID | Drain Current - Continuous - Pulsed |
48 |
A | |
|
144 | ||||
| PD | Total Power Dissipation @ TC = 25°C Derate above 25°C |
100 |
W | |
|
0.67 |
W/ | |||
| TJ,TSTG | Operating and Storage Temperature Range |
-65 to 175 |
||
| TL | Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
275 |
||
`48A, 50V. RDS(ON) = 0.025 @ VGS=10V.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design for extremely low RDS(ON).
`TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
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