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NDP6050L, NDP6051, NDP605A

Table of contents:
Info of NDP6050L
Info of NDP6051
Info of NDP605A

NDP6050L, NDP6051, NDP605A Selling Leads, Datasheet

MFG:FSC Package Cooled:TO220 D/C:TO

NDP6050L, NDP6051, NDP605A Datasheet download

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Part Number: NDP6050L

MFG: FSC

Package Cooled: TO220

D/C: TO

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NDP6050L General Description

These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

NDP6050L Maximum Ratings

Symbol	Parameter	NDP6050L	NDB6050L	Units
V_DSS	Drain-Source Voltage	50		V
V_DGR	Drain-Gate Voltage (R_GS < 1 M)	50		V
V_DSS	Gate-Source Voltage - Continuous - Nonrepetitive (t_P < 50 µs)	± 16		V
		± 25
I_D	Drain Current - Continuous - Pulsed	48		A
		144
P_D	Total Power Dissipation @ T_C = 25°C Derate above 25°C	100		W
		0.67		W/
T_J,T_STG	Operating and Storage Temperature	-65 to 175
T_L	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	275

NDP6050L Features

`48A, 50V. R_DS(ON) = 0.025 @ V_GS = 5V.
`Low drive requirements allowing operation directly from logic drivers. V_GS(TH) < 2.0V.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design for extremely low R_DS(ON).
`TO-220 and TO-263 (D²PAK) package for both through hole and surface mount applications.

NDP6051 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

NDP6051 Maximum Ratings

Symbol	Parameter	NDP6051	NDB6051	Units
V_DSS	Drain-Source Voltage	50		V
V_DGR	Drain-Gate Voltage (R_GS 1 M)	50		V
V_GSS	Gate-Source Voltage - Continuous - Nonrepetitive (t_P< 50 s)	± 20		V
		± 40
I_D	Drain Current - Continuous - Pulsed	48		A
		144
P_D	Total Power Dissipation @ T_C = 25°C Derate above 25°C	100		W
		0.67		W/
T_J,T_STG	Operating and Storage Temperature Range	-65 to 175
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	275

NDP6051 Features

`48 A, 50 V. R_DS(ON) = 0.022 @ V_GS= 10 V.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design for extremely low R_DS(ON).
`TO-220 and TO-263 (D²PAK) package for both through hole and surface mount applications.

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