MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-220 D/C:08+
NDP605B, NDP6060, NDP6060L Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: TO-220
D/C: 08+
Description: MOSFET N-CH 60V 48A TO-220AB
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PDF/DataSheet Download
Datasheet: NDP605B
File Size: 188956 KB
Manufacturer: NSC [National Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NDP6060
File Size: 369329 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NDP6060L
File Size: 369164 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | NDP6060 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 48A |
| Rds On (Max) @ Id, Vgs | 25 mOhm @ 24A, 10V |
| Input Capacitance (Ciss) @ Vds | 1800pF @ 25V |
| Power - Max | 100W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 70nC @ 10V |
| Package / Case | TO-220AB |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NDP6060 NDP6060 |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
| Symbol | Parameter | NDP6060 | NDB6060 |
Units |
| VDSS | Drain-Source Voltage |
60 |
V | |
| VDGR | Drain-Gate Voltage (RGS 1 M) |
60 |
V | |
| VGSS | Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 s) |
± 20 |
V | |
|
± 40 | ||||
| ID | Drain Current - Continuous Tc=25oC - Continuous TC=100oC - Pulsed |
48 |
A | |
|
32 | ||||
|
144 | ||||
| PD | Total Power Dissipation @ TC = 25°C Derate above 25°C |
100 |
W | |
|
0.67 |
W/ | |||
| TJ,TSTG | Operating and Storage Temperature Range |
-65 to 175 |
||
| TL | Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
275 |
||
`48A, 60V. RDS(ON) = 0.025 @ VGS=10V.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design for extremely low RDS(ON).
`TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
| Technical/Catalog Information | NDP6060L |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 48A |
| Rds On (Max) @ Id, Vgs | 20 mOhm @ 24A, 10V |
| Input Capacitance (Ciss) @ Vds | 2000pF @ 25V |
| Power - Max | 100W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 60nC @ 5V |
| Package / Case | TO-220AB |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NDP6060L NDP6060L |
These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
| Symbol |
Parameter |
NDP6060L |
NDB6060L |
Units |
| VDSS | Drain-Source Voltage |
60 |
V | |
| VDGR | Drain-Gate Voltage (RGS < 1 MW) |
60 |
V | |
| VDSS | Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 µs) |
± 16 |
V | |
|
± 25 | ||||
| ID | Drain Current - Continuous - Pulsed |
48 |
A | |
|
144 | ||||
| PD | Total Power Dissipation @ TC = 25°C Derate above 25°C |
100
|
W | |
|
0.67 |
W/ | |||
| TJ,TSTG | Operating and Storage Temperature |
-65 to 175 |
||
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
275 |
||
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