NDP706AC, NDP708A, NDP708AE Selling Leads, Datasheet
MFG:FSC Package Cooled:1000 D/C:06+
NDP706AC, NDP708A, NDP708AE Datasheet download
Part Number: NDP706AC
MFG: FSC
Package Cooled: 1000
D/C: 06+
NDP706AC, NDP708A, NDP708AE
- Table of contents:
Info of NDP706AC
Info of NDP708A
Info of NDP708AE
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About NDP4050
PDF/DataSheet Download
Datasheet: NDP4050
File Size: 68582 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About NDP708A
PDF/DataSheet Download
Datasheet: NDP708A
File Size: 76708 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About NDP708AE
PDF/DataSheet Download
Datasheet: NDP708AE
File Size: 76708 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
NDP708A General Description
These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
NDP708A Maximum Ratings
| Symbol | Parameter | NDP708A NDP708AE NDB708A NDB708AE |
NDP708B NDP708BE NDB708B NDB708BE |
Units |
| VDSS VDGR VGSS ID PD TJ,TSTG TL |
Drain-Source Voltage Drain-Gate Voltage (RGS < 1 M) Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 s) Drain Current - Continuous - Pulsed Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
80 80 ±20 ±40 |
V V V V A A W W/°C °C °C | |
|
60 180 |
54 162 | |||
|
150 1 -65 to 175 275 | ||||
NDP708A Features
·60 and 54A, 80V. RDS(ON) = 0.022 and 0.025W.
·Critical DC electrical parameters specified at elevated temperature.
·Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
·175°C maximum junction temperature rating.
·High density cell design (3 million/in²) for extremely low RDS(ON).
·TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
·Critical DC electrical parameters specified at elevated temperature.
·Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
·175°C maximum junction temperature rating.
·High density cell design (3 million/in²) for extremely low RDS(ON).
·TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
NDP708A Connection Diagram
NDP708AE General Description
These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
NDP708AE Maximum Ratings
| Symbol | Parameter | NDP708A NDP708AE NDB708A NDB708AE |
NDP708B NDP708BE NDB708B NDB708BE |
Units |
| VDSS VDGR VGSS ID PD TJ,TSTG TL |
Drain-Source Voltage Drain-Gate Voltage (RGS < 1 M) Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 s) Drain Current - Continuous - Pulsed Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
80 80 ±20 ±40 |
V V V V A A W W/°C °C °C | |
|
60 180 |
54 162 | |||
|
150 1 -65 to 175 275 | ||||
NDP708AE Features
·60 and 54A, 80V. RDS(ON) = 0.022 and 0.025W.
·Critical DC electrical parameters specified at elevated temperature.
·Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
·175°C maximum junction temperature rating.
·High density cell design (3 million/in²) for extremely low RDS(ON).
·TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
·Critical DC electrical parameters specified at elevated temperature.
·Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
·175°C maximum junction temperature rating.
·High density cell design (3 million/in²) for extremely low RDS(ON).
·TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
NDP708AE Connection Diagram
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