NDP708B, NDP708BE, NDP710A Selling Leads, Datasheet
MFG:NS Package Cooled:TO-220 D/C:TO
NDP708B, NDP708BE, NDP710A Datasheet download
Part Number: NDP708B
MFG: NS
Package Cooled: TO-220
D/C: TO
NDP708B, NDP708BE, NDP710A
- Table of contents:
Info of NDP708B
Info of NDP708BE
Info of NDP710A
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About NDP708B
PDF/DataSheet Download
Datasheet: NDP708B
File Size: 76708 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About NDP708BE
PDF/DataSheet Download
Datasheet: NDP708BE
File Size: 76708 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About NDP710A
PDF/DataSheet Download
Datasheet: NDP710A
File Size: 75783 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
NDP708B General Description
These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
NDP708B Maximum Ratings
| Symbol | Parameter | NDP708A NDP708AE NDB708A NDB708AE |
NDP708B NDP708BE NDB708B NDB708BE |
Units |
| VDSS VDGR VGSS ID PD TJ,TSTG TL |
Drain-Source Voltage Drain-Gate Voltage (RGS < 1 M) Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 s) Drain Current - Continuous - Pulsed Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
80 80 ±20 ±40 |
V V V V A A W W/°C °C °C | |
|
60 180 |
54 162 | |||
|
150 1 -65 to 175 275 | ||||
NDP708B Features
·60 and 54A, 80V. RDS(ON) = 0.022 and 0.025W.
·Critical DC electrical parameters specified at elevated temperature.
·Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
·175°C maximum junction temperature rating.
·High density cell design (3 million/in²) for extremely low RDS(ON).
·TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
·Critical DC electrical parameters specified at elevated temperature.
·Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
·175°C maximum junction temperature rating.
·High density cell design (3 million/in²) for extremely low RDS(ON).
·TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
NDP708B Connection Diagram
NDP708BE General Description
These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
NDP708BE Maximum Ratings
| Symbol | Parameter | NDP708A NDP708AE NDB708A NDB708AE |
NDP708B NDP708BE NDB708B NDB708BE |
Units |
| VDSS VDGR VGSS ID PD TJ,TSTG TL |
Drain-Source Voltage Drain-Gate Voltage (RGS < 1 M) Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 s) Drain Current - Continuous - Pulsed Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
80 80 ±20 ±40 |
V V V V A A W W/°C °C °C | |
|
60 180 |
54 162 | |||
|
150 1 -65 to 175 275 | ||||
NDP708BE Features
·60 and 54A, 80V. RDS(ON) = 0.022 and 0.025W.
·Critical DC electrical parameters specified at elevated temperature.
·Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
·175°C maximum junction temperature rating.
·High density cell design (3 million/in²) for extremely low RDS(ON).
·TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
·Critical DC electrical parameters specified at elevated temperature.
·Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
·175°C maximum junction temperature rating.
·High density cell design (3 million/in²) for extremely low RDS(ON).
·TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
NDP708BE Connection Diagram
NDP710A General Description
These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
NDP710A Maximum Ratings
|
Symbol |
Parameter |
NDP710A NDP710AE NDB710A NDB710AE |
NDP710B NDP710BE NDB710B NDB710BE |
Units |
|
VDSS |
Drain-Source Voltage |
100 |
V | |
|
VDGR |
Drain-Gate Voltage (RGS < 1 M) |
100 |
V | |
|
VGSS |
Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 s) |
± 20 |
V | |
|
± 40 | ||||
|
ID |
Drain Current - Continuous - Pulsed |
42 |
40 |
A |
|
168 |
160 | |||
|
PD |
Total Power Dissipation Derate above 25°C |
150 |
W | |
|
1 |
W/ | |||
|
TJ,TSTG |
Operating and Storage Temperature Range |
-65 to 175 |
||
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
275 |
||
NDP710A Features
`42 and 40A, 100V. RDS(ON) = 0.038 and 0.042.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design (3 million/in²) for extremely low RDS(ON).
`TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design (3 million/in²) for extremely low RDS(ON).
`TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
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