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NDT014, NDT014L, NDT2955

Table of contents:
Info of NDT014
Info of NDT014L
Info of NDT2955

NDT014, NDT014L, NDT2955 Selling Leads, Datasheet

MFG:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products Package Cooled:. D/C:06+

NDT014, NDT014L, NDT2955 Datasheet download

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Part Number: NDT014

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor (VA)

Package Cooled: .

D/C: 06+

Description: MOSFET P-CH 60V 2.5A SOT-223-4

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NDT014 Parameters

Technical/Catalog Information	NDT014
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	2.7A
Rds On (Max) @ Id, Vgs	200 mOhm @ 1.6A, 10V
Input Capacitance (Ciss) @ Vds	155pF @ 25V
Power - Max	1.1W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	11nC @ 10V
Package / Case	SOT-223-4
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	NDT014 NDT014 NDT014CT ND NDT014CTND NDT014CT

NDT014 General Description

Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.

NDT014 Maximum Ratings

Symbol	Parameter	NDT014	Units
V_DSS	Drain-Source Voltage	60	V
V_GSS	Gate-Source Voltage - Continuous	±20	V
I_D	Drain Current - Continuous (Note 1a) - Pulsed	±2.7	A
I_D	Drain Current - Continuous (Note 1a) - Pulsed	±10	A
P_D	Maximum Power Dissipation (Note 1a) (Note 1b) (Note 1c)	3	W
		1.3
		1.1
T_J,T_STG	Operating and Storage Temperature Range	-65 to 150
THERMAL CHARACTERISTICS
R_JA	Thermal Resistance, Junction-to-Ambient (Note 1a)	42	/W
R_JC	Thermal Resistance, Junction-to-Case (Note 1)	12	/W
* Order option J23Z for cropped center drain lead.

NDT014 Features

`2.7A, 60V. R_DS(ON) = 0.2 @ V_GS = 10V.
`High density cell design for extremely low R_DS(ON).
`High power and current handling capability in a widely used surface mount package.

NDT014 Connection Diagram

NDT014L Parameters

Technical/Catalog Information	NDT014L
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	2.8A
Rds On (Max) @ Id, Vgs	160 mOhm @ 3.4A, 10V
Input Capacitance (Ciss) @ Vds	214pF @ 30V
Power - Max	1.1W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	5nC @ 4.5V
Package / Case	SOT-223, SC-73, TO-261 (3 Leads + Tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NDT014L NDT014L

NDT014L General Description

These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes.Thesedevices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.

NDT014L Maximum Ratings

Symbol	Parameter	NDT014L	Units
V_DSS	Drain-Source Voltage	60	V
V_GSS	Gate-Source Voltage - Continuous	± 20	V
I_D	Drain Current - Continuous (Note 1a) - Pulsed	± 2.8	A
I_D	Drain Current - Continuous (Note 1a) - Pulsed	± 10	A
P_D	Maximum Power Dissipation (Note 1a) (Note 1b) (Note 1c)	3	W
		1.3
		1.1
T_J,T_STG	Operating and Storage Temperature Range	-65 to 150
THERMAL CHARACTERISTICS
R_JA	Thermal Resistance, Junction-to-Ambient (Note 1a)	42	/W
R_JC	Thermal Resistance, Junction-to-Case (Note 1)	12	/W

NDT014L Features

`2.8 A, 60 V. R_DS(ON) = 0.2 @ V_GS= 4.5 V
R_DS(ON) = 0.16 @ V_GS = 10 V.
`High density cell design for extremely low R_DS(ON).
`High power and current handling capability in a widely used surface mount package.

NDT014L Connection Diagram

NDT2955 Parameters

Technical/Catalog Information	NDT2955
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	2.5A
Rds On (Max) @ Id, Vgs	300 mOhm @ 2.5A, 10V
Input Capacitance (Ciss) @ Vds	601pF @ 30V
Power - Max	1.1W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	15nC @ 10V
Package / Case	SOT-223-4
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NDT2955 NDT2955 NDT2955CT ND NDT2955CTND NDT2955CT

NDT2955 General Description

Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and DC motor control.

NDT2955 Maximum Ratings

Symbol	Parameter	NDT2955	Units
V_DSS	Drain-Source Voltage	-60	V
V_GSS	Gate-Source Voltage - Continuous	±20	V
I_D	Drain Current - Continuous (Note 1a) - Pulsed	-2.5	A
I_D	Drain Current - Continuous (Note 1a) - Pulsed	-15	A
P_D	Maximum Power Dissipation (Note 1a) (Note 1b) (Note 1c)	3	W
		1.3
		1.1
T_J,T_STG	Operating and Storage Temperature Range	-65 to 150
THERMAL CHARACTERISTICS
R_JA	Thermal Resistance, Junction-to-Ambient (Note 1a)	42	/W
R_JC	Thermal Resistance, Junction-to-Case (Note 1)	12	/W
* Order option J23Z for cropped center drain lead.

NDT2955 Features

`-2.5A, -60V. R_DS(ON) = 0.3 @ V_GS = -10V.
`High density cell design for extremely low R_DS(ON).
`High power and current handling capability in a widely used surface mount package.

NDT2955 Connection Diagram

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