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MFG:ON Semiconductor (VA)  Category:Discrete Semiconductor Products  Package Cooled:SOT-563  D/C:0805+

NST3904DXV6T1G, NST3946DXV6T1, NST3946DXV6T1G Picture

NST3904DXV6T1G, NST3946DXV6T1, NST3946DXV6T1G Datasheet download

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Part Number: NST3904DXV6T1G

Category: Discrete Semiconductor Products

MFG: ON Semiconductor (VA)

Package Cooled: SOT-563

D/C: 0805+

Description: TRANS NPN/PNP 200MA 40V SOT-563

 

 
 
 
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About NST3904DXV6T1

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Datasheet: NST3904DXV6T1

File Size: 102973 KB

Manufacturer: ONSEMI [ON Semiconductor]

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Datasheet: NST3946DXV6T1

File Size: 164224 KB

Manufacturer: ONSEMI [ON Semiconductor]

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Datasheet: NST3904DXV6T1

File Size: 102973 KB

Manufacturer: ONSEMI [ON Semiconductor]

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NST3904DXV6T1G Parameters

Technical/Catalog InformationNST3904DXV6T1G
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Transistor Type2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max)40V
Current - Collector (Ic) (Max)200mA
Power - Max500mW
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 100A, 1V
Vce Saturation (Max) @ Ib, Ic300mV @ 5mA, 50mA
Frequency - Transition300MHz
Current - Collector Cutoff (Max)-
Mounting TypeSurface Mount
Package / CaseSOT-563
PackagingCut Tape (CT)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NST3904DXV6T1G
NST3904DXV6T1G
NST3904DXV6T1GOSCT ND
NST3904DXV6T1GOSCTND
NST3904DXV6T1GOSCT

NST3946DXV6T1 General Description

The NST3946DXV6T1 device is a spin- off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT- 563 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applications where board space is at a premium.

NST3946DXV6T1 Maximum Ratings

Rating Symbol Value Unit
Collector - Emitter Voltage
(NPN)
(PNP)
VCEO 40
-40
Vdc
Collector - Base Voltage
(NPN)
(PNP)
VCBO 60
-40
Vdc
Emitter - Base Voltage
(NPN)
(PNP)
VEBO 6.0
-5.0
Vdc
Collector Current - Continuous
(NPN)
(PNP)
IC 200
-200
mAdc
Electrostatic Discharge ESD HBM>16000,
MM>2000
V

NST3946DXV6T1 Features

• hFE, 100-300
• Low VCE(sat), 0.4 V
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Lead-Free Solder Plating

NST3946DXV6T1G Parameters

Technical/Catalog InformationNST3946DXV6T1G
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Transistor TypeNPN + PNP (Dual)
Voltage - Collector Emitter Breakdown (Max)40V
Current - Collector (Ic) (Max)200mA
Power - Max500mW
DC Current Gain (hFE) (Min) @ Ic, Vce40, 60 @ 100A, 1V
Vce Saturation (Max) @ Ib, Ic300mV, 400mV @ 5mA, 50mA
Frequency - Transition300MHz, 250MHz
Current - Collector Cutoff (Max)-
Mounting TypeSurface Mount
Package / CaseSOT-563
PackagingCut Tape (CT)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NST3946DXV6T1G
NST3946DXV6T1G
NST3946DXV6T1GOSCT ND
NST3946DXV6T1GOSCTND
NST3946DXV6T1GOSCT

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