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NTF3055L175T3LF, NTF5P03T3, NTF5P03T3G

Table of contents:
Info of NTF3055L175T3LF
Info of NTF5P03T3
Info of NTF5P03T3G

NTF3055L175T3LF, NTF5P03T3, NTF5P03T3G Selling Leads, Datasheet

MFG:ON Semiconductor Category:Undefined Category Package Cooled:SN D/C:2006

NTF3055L175T3LF, NTF5P03T3, NTF5P03T3G Datasheet download

Five Points

Part Number: NTF3055L175T3LF

Category: Undefined Category

MFG: ON Semiconductor

Package Cooled: SN

D/C: 2006

Description: MOSFET PWR P-CH 5.2A 30V SOT223

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NTF3055L175T3LF Parameters

Technical/Catalog Information	NTF3055L175T3LF
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	2A
Rds On (Max) @ Id, Vgs	175 mOhm @ 1A, 5V
Input Capacitance (Ciss) @ Vds	270pF @ 25V
Power - Max	1.3W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	10nC @ 5V
Package / Case	SOT-223, SC-73, TO-261 (3 Leads + Tab)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	NTF3055L175T3LF NTF3055L175T3LF NTF3055L175T3LFOS ND NTF3055L175T3LFOSND NTF3055L175T3LFOS

NTF5P03T3 Maximum Ratings

Rating		Symbol	Value	Unit
Drain−to−Source Voltage		V_DSS	-30	V
DraintoGate Voltage (RGS = 1.0 M)		V_DGR	-30	V
Gate−to−Source Voltage		V_GS	±20	V
1, SQ. FR4 or G10 PCB 10 seconds	Thermal Resistance Junction to Ambient Total Power Dissipation @ TA = 25°C Linear Derating Factor Drain Current Continuous @ TA = 25°C Continuous @ TA = 70°C Pulsed Drain Current (Note 1)	RTHJA PD ID ID IDM	40 3.13 25 5.2 4.1 26	°C/W Watts mW/°C A A A
Minimum FR4 or G10 PCB 10 seconds	Thermal Resistance Junction to Ambient Total Power Dissipation @ TA = 25°C Linear Derating Factor Drain Current Continuous @ TA = 25°C Continuous @ TA = 70°C Pulsed Drain Current (Note 1)	RTHJA PD ID ID IDM	80 1.56 12.5 3.7 2.9 19	°C/W Watts mW/°C A A A
Operating Junction and Storage Temperature		T_J,T_STG	55 to 150	°C
Single Pulse DraintoSource Avalanche Energy Starting TJ = 25°C (VDD = 30 Vdc, VGS = 10 Vdc, Peak IL = 12 Apk, L = 3.5 mH, RG = 25 )		EAS	225	mJ

1. Repetitive rating; pulse width limited by maximum junction temperature.

NTF5P03T3 Features

• Ultra Low RDS(on)
• Higher Efficiency Extending Battery Life
• Logic Level Gate Drive
• Miniature SOT223 Surface Mount Package
• Avalanche Energy Specified

NTF5P03T3 Typical Application

• DCDC Converters
• Power Management
• Motor Controls
• Inductive Loads
• Replaces MMFT5P03HD

NTF5P03T3 Connection Diagram

NTF5P03T3G Parameters

Technical/Catalog Information	NTF5P03T3G
Vendor	ON Semiconductor
Category	Undefined Category
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NTF5P03T3G NTF5P03T3G NTF5P03T3GOSTR ND NTF5P03T3GOSTRND NTF5P03T3GOSTR

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