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The OPB608 is a reflective switch that consist of an infrared emitting device (LED or VCSEL) and an NPN silicon hototransistor mounted "side-by-side" on a parallel axis in a black opaque plastic housing. Both the eitting device nd phototransistor are encapsulated in a visible filtering epoxy except the OPB608R. The phototransistor responds to radiation from the emitter only when a reflective object passes within its field of view. The phototransistor has hanced low current roll off to improve the contrast ratio and immunity to background irradiance. The LED versions are designed for near field applications with the VCSEL version being designed for longer distances.
The OPB608A/B/C devices are designed for applications with reflective distances between 0.050" and 0.375" and hen the light pattern is not to be seen by the human eye except for the OPB608R. By utilizing the night nhancement function of a camera, the near infrared light pattern can be seen. This allows the user to see the pattern shining on the reflective object.
The OPB608R device is designed for applications with reflective distances between 0.050" and 0.300" and when the light pattern is to be seen by the human eye. The efficiency of the sensor is lower for optical wavelengths in the visible range thus reducing the distance that can be used.
The OPB608V device is designed for applications with reflective distances between 0.050" and 1.5" and when the light pattern is not to be seen by the human eye. By utilizing the night enhancement function of a camera, the near infrared light pattern can be seen. This allows the user to see the pattern shining on the reflective object.
Reflective distances are dependent upon the drive current for the light emitting device, the wavelength of the light source, and the type of reflective material, therefore each application should be checked for the ability to meet each application.
OPB608B Maximum Ratings
Storage and Operating Temperature
-40 to +85
Lead Soldering Temperature (1/16" (1.6mm) from case for 5 seconds with soldering iron)
260 (1)
Forward DC Current
50 mA
Peak Forward Current (1s pulse width, 300 pps)
3.0 A
Reverse DC voltage
2.0 V
Power Dissipation
75 mW (3)
Forward DC Current
50 mA
Reverse DC voltage
5.0 V
Power Dissipation
100 mW (3)
Forward DC Current
30 mA
Reverse DC voltage
5.0 V
Power Dissipation
75 mW (3)
Collector-Emitter Voltage
30 V
Emitter Reverse Current
10 mA
Collector DC Current
25 mA
Power Dissipation
100 mW (3)
Notes: (1) RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. (2) Methanol or isopropanol are recommended as cleaning agents. The plastic housing is soluble in chlorinated ydrocarbons and keytones. (3) Derate Linearly 1.6 mW/ above 25.
OPB608B Features
• Phototransistor Output • Unfocused for sensing diffuse surface • Low Cost Plastic Housing • Enhanced signal to noise ratio • Reduced ambient light sensitivity
OPB608V Parameters
Technical/Catalog Information
OPB608V
Vendor
TT Electronics/Optek Technology
Category
Sensors, Transducers
Sensing Distance
0.050" (1.27mm)
Sensing Method
Reflective
Output Type
Phototransistor
Voltage - Collector Emitter Breakdown (Max)
30V
Current - Collector (Ic) (Max)
25mA
Current - DC Forward (If)
12mA
Response Time
-
Operating Temperature
0°C ~ 70°C
Features
Unfocused Sensing
Mounting Type
Through Hole
Package / Case
PCB Mount
Packaging
Bulk
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
OPB608V OPB608V
OPB608V General Description
The OPB608 is a reflective switch that consist of an infrared emitting device (LED or VCSEL) and an NPN silicon hototransistor mounted "side-by-side" on a parallel axis in a black opaque plastic housing. Both the eitting device nd phototransistor are encapsulated in a visible filtering epoxy except the OPB608R. The phototransistor responds to radiation from the emitter only when a reflective object passes within its field of view. The phototransistor has hanced low current roll off to improve the contrast ratio and immunity to background irradiance. The LED versions are designed for near field applications with the VCSEL version being designed for longer distances.
The OPB608A/B/C devices are designed for applications with reflective distances between 0.050" and 0.375" and hen the light pattern is not to be seen by the human eye except for the OPB608R. By utilizing the night nhancement function of a camera, the near infrared light pattern can be seen. This allows the user to see the pattern shining on the reflective object.
The OPB608R device is designed for applications with reflective distances between 0.050" and 0.300" and when the light pattern is to be seen by the human eye. The efficiency of the sensor is lower for optical wavelengths in the visible range thus reducing the distance that can be used.
The OPB608V device is designed for applications with reflective distances between 0.050" and 1.5" and when the light pattern is not to be seen by the human eye. By utilizing the night enhancement function of a camera, the near infrared light pattern can be seen. This allows the user to see the pattern shining on the reflective object.
Reflective distances are dependent upon the drive current for the light emitting device, the wavelength of the light source, and the type of reflective material, therefore each application should be checked for the ability to meet each application.
OPB608V Maximum Ratings
Storage and Operating Temperature
-40 to +85
Lead Soldering Temperature (1/16" (1.6mm) from case for 5 seconds with soldering iron)
260 (1)
Forward DC Current
50 mA
Peak Forward Current (1s pulse width, 300 pps)
3.0 A
Reverse DC voltage
2.0 V
Power Dissipation
75 mW (3)
Forward DC Current
50 mA
Reverse DC voltage
5.0 V
Power Dissipation
100 mW (3)
Forward DC Current
30 mA
Reverse DC voltage
5.0 V
Power Dissipation
75 mW (3)
Collector-Emitter Voltage
30 V
Emitter Reverse Current
10 mA
Collector DC Current
25 mA
Power Dissipation
100 mW (3)
Notes: (1) RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. (2) Methanol or isopropanol are recommended as cleaning agents. The plastic housing is soluble in chlorinated ydrocarbons and keytones. (3) Derate Linearly 1.6 mW/ above 25.
OPB608V Features
• Phototransistor Output • Unfocused for sensing diffuse surface • Low Cost Plastic Housing • Enhanced signal to noise ratio • Reduced ambient light sensitivity
