PA2423L, PA2423L-R, PA2423MB Selling Leads, Datasheet
MFG:SIG Package Cooled:QFN D/C:04+
PA2423L, PA2423L-R, PA2423MB Datasheet download
Part Number: PA2423L
MFG: SIG
Package Cooled: QFN
D/C: 04+
MFG:SIG Package Cooled:QFN D/C:04+
PA2423L, PA2423L-R, PA2423MB Datasheet download
MFG: SIG
Package Cooled: QFN
D/C: 04+
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PDF/DataSheet Download
Datasheet: PA2423L
File Size: 376445 KB
Manufacturer: SIGE [SiGe Semiconductor, Inc.]
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PDF/DataSheet Download
Datasheet: PA2010
File Size: 100381 KB
Manufacturer: MACOM [Tyco Electronics]
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PDF/DataSheet Download
Datasheet: PA2423MB
File Size: 379674 KB
Manufacturer: SIGE [SiGe Semiconductor, Inc.]
Download : Click here to Download
A monolithic, high-efficiency, silicon-germanium power amplifier IC, the PA2423MB is designed for class 1 Bluetoothtm 2.4 GHz radio applications. It delivers +22.7 dBm output power with 45% power-added efficiency making it capable of overcoming insertion losses of up to 2.7 dB between amplifier output and antenna input in class 1 Bluetoothtm applications.
An on-chip ramping circuit provides the turnon/off switching of amplifier output with less than 3dB overshoot, meeting the Bluetoothtm specification 1.1.
The PA2423MB operates at 3.3V DC. At typical output power level (+22.7 dBm), its current consumption is 125 mA.
The silicon/silicon-germanium structure of the PA2423MB and its exposed-die-pad package, soldered to the system PCB provide high thermal conductivity and a subsequently low junction temperature. This device is capable of operating at a duty cycle of 100 percent.
Symbol | Parameter | Min. | Max. | Unit |
VCC | Supply Voltage | -0.3 | +3.6 | V |
VCTL | Control Voltage | -0.3 | VCC | V |
VRAMP | Ramping Voltage | -0.3 | VCC | V |
IN | RF Input Power | +8 | dBm | |
TA | Operating Temperature Range | -40 | +8.5 | °C |
TSTG | Storage Temperature Range | -40 | +150 | °C |
Tj | Maximum Junction Temperature | +150 | °C |