PBYR245CT, PBYR2520CT, PBYR2525CT Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:SOT-223 D/C:0630+
PBYR245CT, PBYR2520CT, PBYR2525CT Datasheet download

Part Number: PBYR245CT
MFG: PHILIPS
Package Cooled: SOT-223
D/C: 0630+
MFG:PHILIPS Package Cooled:SOT-223 D/C:0630+
PBYR245CT, PBYR2520CT, PBYR2525CT Datasheet download

MFG: PHILIPS
Package Cooled: SOT-223
D/C: 0630+
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PDF/DataSheet Download
Datasheet: PBYR245CT
File Size: 40241 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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PDF/DataSheet Download
Datasheet: PBYR2520CT
File Size: 35834 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PBYR2525CT
File Size: 35834 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
Dual, common cathode schottky rectifier diodes in a plastic envelope. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies.
The PBYR245CT series is supplied in the surface mounting SOT223 package.
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT | |
| VRRM VRWM VR IO(AV) IFRM IFSM IRRM Tj Tstg |
Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current per diode Peak repetitive reverse surge current per diode Operating junction temperature Storage temperature |
PBYR2 Tsp 74 °C square wave; = 0.5; Tsp 119 °C square wave; = 0.5; Tsp 119 °C t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 °C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tjmax |
- - - - - - - - - - 40 |
40CT 40 40 40 |
45CT 45 45 45 |
V V V A A A A A °C °C |
| 2 2 6 6.6 1 150 150 | ||||||

Dual nickel silicide schottky barrier rectifier diodes in a plastic envelope featuring low forward voltage drop and absence of stored charge. These devices can withstand reverse voltage transients and have guaranteed reverse surge capability.
The devices are intended for use in switched mode power supplies with 3 V - 3.3 V outputs, or as or-ing diodes in fault tolerant power supply systems.
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT | |
| VRRM VRWM VR IO(AV) IO(RMS) IFRM I2t IFSM IRRM Tj Tstg |
Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage Average output current (both diodes conducting) RMS output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current, per diode I2t for fusing Repetitive peak reverse current per diode Non-repetitive peak reverse current per diode Storage temperature Operating junction temperature |
Tmb 109 °C square wave; = 0.5; Tmb 135 °C t = 25 ms; = 0.5; Tmb 135 °C t = 10 ms t = 8.3 ms sinusoidal Tj = 125 °C prior to surge; with reapplied VRRM(max) t = 10 ms tp = 2 ms; d = 0.001 tp = 100 ms |
- - - - - - - - - - - -65 - |
-20 20 20 20 |
-25 25 25 25 |
V V V A A A A A A2s A A °C °C |
| 30 43 30 180 200 162 2 2 175 150 | ||||||

