PD55025, PD55035S, PD5506A Selling Leads, Datasheet
MFG:sgs Package Cooled:sgs D/C:dc02
PD55025, PD55035S, PD5506A Datasheet download
Part Number: PD55025
MFG: sgs
Package Cooled: sgs
D/C: dc02
MFG:sgs Package Cooled:sgs D/C:dc02
PD55025, PD55035S, PD5506A Datasheet download
MFG: sgs
Package Cooled: sgs
D/C: dc02
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PDF/DataSheet Download
Datasheet: PD55025
File Size: 296180 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PD55035S
File Size: 186260 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PD500
File Size: 118056 KB
Manufacturer: ANADIGICS, Inc
Download : Click here to Download
The PD55025 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55025 boasts the excellent gain, linearity and reliability of ST's latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD55025's superior linearity performance makes it an ideal solution for car mobile radio.
The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly.
Symbol |
Parameter |
Value |
Unit |
V(BR)DSS |
Drain-Source Voltage |
40 |
V |
VGS |
Gate-Source Voltage |
± 20 |
V |
ID |
Drain Current |
7 |
A |
PDISS |
Power Dissipation (@ Tc = 70) |
79 |
W |
Tj |
Max. Operating Junction Temperature |
165 |
|
TSTG |
Storage Temperature |
-65 to +150 |
|
· EXCELLENT THERMAL STABILITY
· COMMON SOURCE CONFIGURATION
· POUT = 25 W with 14.5 dB gain @ 500 MHz / 12.5 V
· NEW RF PLASTIC PACKAGE