MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:SMD/DIP D/C:2009
PD57006TR ST, PD57018-E, PD57018S Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: SMD/DIP
D/C: 2009
Description: TRANS RF N-CH FET LDMOST PWRSO10
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PDF/DataSheet Download
Datasheet: PD500
File Size: 118056 KB
Manufacturer: ANADIGICS, Inc
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PD500
File Size: 118056 KB
Manufacturer: ANADIGICS, Inc
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PD57018S
File Size: 48879 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
| Technical/Catalog Information | PD57018-E |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Transistor Type | N-Channel |
| Voltage - Rated | 65V |
| Current Rating | 2.5A |
| Package / Case | PowerSO-10 Exposed Bottom Pad |
| Packaging | Tube |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | PD57018 E PD57018E 497 5305 5 ND 49753055ND 497-5305-5 |
The PD57018 isacommon sourceN-Channel, en-hancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. Itoperates at 28V in common source mode at frequencies of up to 1GHz. PD57018 boasts the excellent gain, linearity and reliability of ST's latest LDMOS tech-nology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD57018's su-perior linearity performance makes it an ideal so-lution for base station applications.
The PowerSO-10 plastic package, designed toof-fer high reliability, is the first ST JEDECapproved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease ofassembly.
|
Symbol |
Parameter |
Value |
Unit |
|
V(BR)DSS |
Drain-Source Voltage |
65 |
V |
|
VGS |
Gate-Source Voltage |
±20 |
V |
|
ID |
Drain Current |
2.5 |
A |
|
PDISS |
Power Dissipation (@ Tc = 70) |
31.7 |
W |
|
Tj |
Max. Operating Junction Temperature |
165 |
|
|
TSTG |
Storage Temperature |
-65 to 175 |
· EXCELLENT THERMAL STABILITY
· COMMON SOURCE CONFIGURATION
· POUT = 18Wwith14dB gain@960 MHz /28V
· NEW RF PLASTIC PACKAGE
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