PD57018, PD5754A, PD5852A Selling Leads, Datasheet
MFG:ST Package Cooled:LDMOS/UHF D/C:06+
PD57018, PD5754A, PD5852A Datasheet download
Part Number: PD57018
MFG: ST
Package Cooled: LDMOS/UHF
D/C: 06+
PD57018, PD5754A, PD5852A
- Table of contents:
Info of PD57018
Info of PD5754A
Info of PD5852A
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About PD57018
PDF/DataSheet Download
Datasheet: PD57018
File Size: 48879 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
About PD500
PDF/DataSheet Download
Datasheet: PD500
File Size: 118056 KB
Manufacturer: ANADIGICS, Inc
Download : Click here to Download
About PD500
PDF/DataSheet Download
Datasheet: PD500
File Size: 118056 KB
Manufacturer: ANADIGICS, Inc
Download : Click here to Download
PD57018 General Description
The PD57018 isacommon sourceN-Channel, en-hancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. Itoperates at 28V in common source mode at frequencies of up to 1GHz. PD57018 boasts the excellent gain, linearity and reliability of ST's latest LDMOS tech-nology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD57018's su-perior linearity performance makes it an ideal so-lution for base station applications.
The PowerSO-10 plastic package, designed toof-fer high reliability, is the first ST JEDECapproved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease ofassembly.
PD57018 Maximum Ratings
|
Symbol |
Parameter |
Value |
Unit |
|
V(BR)DSS |
Drain-Source Voltage |
65 |
V |
|
VGS |
Gate-Source Voltage |
±20 |
V |
|
ID |
Drain Current |
2.5 |
A |
|
PDISS |
Power Dissipation (@ Tc = 70) |
31.7 |
W |
|
Tj |
Max. Operating Junction Temperature |
165 |
|
|
TSTG |
Storage Temperature |
-65 to 175 |
PD57018 Features
· EXCELLENT THERMAL STABILITY
· COMMON SOURCE CONFIGURATION
· POUT = 18Wwith14dB gain@960 MHz /28V
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