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PNP resistor-equipped transistor in a SC-59 (SOT346) plastic package. NPN complement: PDTC143ZK.
PDTA143ZK Maximum Ratings
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
-
-50
V
VCEO
collector-emitter voltage
open base
-
-50
V
VEBO
emitter-base voltage
open collector
-
-10
V
VI
input voltage positive negative
- -
+5 -30
V V
IO
output current (DC)
-
-100
mA
ICM
peak collector current
-
-100
mA
Ptot
total power dissipation
Tamb 25 ; note 1
-
250
mW
Tstg
storage temperature
-65
+150
Tj
junction temperature
-
150
Tamb
operating ambient temperature
-65
+150
Note 1. Transistor mounted on an FR4 printed-circuit board.
PDTA143ZK Features
` Built-in bias resistors R1 and R2 (typ. 4.7 k and 47 k respectively) ` Simplification of circuit design ` Reduces number of components and board space.
PDTA143ZK Typical Application
· Especially suitable for space reduction in interface and driver circuits · Inverter circuit configurations without use of external resistors.