PDTC114TS, PDTC114TT, PDTC114TT215 Selling Leads, Datasheet
MFG:PHI Package Cooled:SOT D/C:97+
PDTC114TS, PDTC114TT, PDTC114TT215 Datasheet download
Part Number: PDTC114TS
MFG: PHI
Package Cooled: SOT
D/C: 97+
PDTC114TS, PDTC114TT, PDTC114TT215
- Table of contents:
Info of PDTC114TS
Info of PDTC114TT
Info of PDTC114TT215
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About PDTC114TS
PDF/DataSheet Download
Datasheet: PDTC114TS
File Size: 54423 KB
Manufacturer: Philips
Download : Click here to Download
About PDTC114TT
PDF/DataSheet Download
Datasheet: PDTC114TT
File Size: 52777 KB
Manufacturer: Philips
Download : Click here to Download
About PDT0311
PDF/DataSheet Download
Datasheet: PDT0311
File Size: 158438 KB
Manufacturer: HP [Agilent(Hewlett-Packard)]
Download : Click here to Download
PDTC114TS General Description
NPN resistor-equipped transistor in a TO-92; SOT54 plastic package. PNP complement: PDTA114TS.
PDTC114TS Maximum Ratings
|
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
|
VCBO |
collector-base voltage | open emitter |
- |
50 |
V |
|
VCEO |
collector-emitter voltage | open base |
- |
50 |
V |
|
VEBO |
emitter-base voltage | open collector |
- |
5 |
V |
|
IO |
output current (DC) |
- |
100 |
mA | |
|
ICM |
peak collector current |
- |
100 |
mA | |
|
Ptot |
total power dissipation | Tamb 25; note 1 |
- |
500 |
mW |
|
TSTG |
Storage temperature |
65 |
+150 |
||
|
Tj |
junction temperature |
- |
150 |
||
|
Tamb |
operating ambient temperature |
-65 |
+150 |
1. Transistor mounted on an FR4 printed-circuit board.
PDTC114TS Features
` Built-in bias resistor R1 (typ. 10 k)
` Simplification of circuit design
` Reduces number of components and board space.
` Simplification of circuit design
` Reduces number of components and board space.
PDTC114TS Typical Application
· Especially suitable for space reduction in interface and driver circuits
· Inverter circuit configurations without use of an external resistor.
· Inverter circuit configurations without use of an external resistor.
PDTC114TS Connection Diagram
PDTC114TT General Description
NPN resistor-equipped transistor in a SOT23 plastic package. PNP complement: PDTA114TT.
PDTC114TT Maximum Ratings
|
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
|
VCBO |
collector-base voltage | open emitter |
- |
50 |
V |
|
VCEO |
collector-emitter voltage | open base |
- |
50 |
V |
|
VEBO |
emitter-base voltage | open collector |
- |
5 |
V |
|
IO |
output current (DC) |
- |
100 |
mA | |
|
ICM |
peak collector current |
- |
100 |
mA | |
|
Ptot |
total power dissipation | Tamb 25; note 1 |
- |
250 |
mW |
|
TSTG |
Storage temperature |
65 |
+150 |
||
|
Tj |
junction temperature |
- |
150 |
||
|
Tamb |
operating ambient temperature |
-65 |
+150 |
1. Transistor mounted on an FR4 printed-circuit board.
PDTC114TT Features
` Built-in bias resistor R1 (typ. 10 k)
` Simplification of circuit design
` Reduces number of components and board space.
` Simplification of circuit design
` Reduces number of components and board space.
PDTC114TT Typical Application
· Especially suitable for space reduction in interface and driver circuits
· Inverter circuit configurations without use of an external resistor.
· Inverter circuit configurations without use of an external resistor.
PDTC114TT Connection Diagram
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