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PDTC143ET, PDTC143ET.215, PDTC143EU

PDTC143ET, PDTC143ET.215, PDTC143EU Selling Leads, Datasheet

MFG:PHILIPS  Package Cooled:05+  D/C:2010

PDTC143ET, PDTC143ET.215, PDTC143EU Picture

PDTC143ET, PDTC143ET.215, PDTC143EU Datasheet download

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Part Number: PDTC143ET

 

MFG: PHILIPS

Package Cooled: 05+

D/C: 2010

 

 

 
 
 
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  • PDTC143ET215

  • Vendor: nxp D/C: 10+& Qty: 57000 Note: new and original stock  Adddate: 2026-04-21
  • Inquire Now
  • Array Microelectronics Co.   China
    Contact: Ms.WangFang   MSN:wangfang-12@hotmail.com
    Tel: 086-021-64016606-8022
    Fax: 086-021-64016601
    (35)

About PDTC143ET

PDF/DataSheet Download

Datasheet: PDTC143ET

File Size: 51828 KB

Manufacturer: PHILIPS [Philips Semiconductors]

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PDTC143ET.215 Suppliers

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About PDT0311

PDF/DataSheet Download

Datasheet: PDT0311

File Size: 158438 KB

Manufacturer: HP [Agilent(Hewlett-Packard)]

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PDTC143EU Suppliers

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  • PDTC143EU

  • Vendor: PHILIPS D/C: 03+& Qty: SOT323  Adddate: 2026-04-21
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  • Walsoon Group Ltd   China
    Contact: Mr.StevenLee   MSN:steven200867@hotmail.com
    Tel: 86-755-82818867-808
    Fax: 86-755-82818852
    (17)

About PDTC143EU

PDF/DataSheet Download

Datasheet: PDTC143EU

File Size: 60186 KB

Manufacturer: Philips

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PDTC143ET General Description

NPN resistor-equipped transistor in a SOT23 plastic package.

PNP complement: PDTA143ET.

PDTC143ET Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 10 V
VI input voltage
positive
negative
-
-

30
-10

V
V
IO output current (DC) - 100 mA
ICM peak collector current - 100 mA
Ptot total power dissipation Tamb 25 ; note 1 - 250 mW
Tstg storage temperature -65 +150
Tj junction temperature - 150
Tamb operating ambient temperature -65 +150

Note
1. Transistor mounted on an FR4 printed-circuit board.

PDTC143ET Features

` Built-in bias resistors R1 and R2 (typ. 4.7 k each)
` Simplification of circuit design
` Reduces number of components and board space.

PDTC143ET Typical Application

· Especially suitable for space reduction in interface and driver circuits
· Inverter circuit configurations without use of external resistors.

PDTC143ET Connection Diagram

PDTC143EU General Description

NPN resistor-equipped transistor in a SOT323 plastic package. PNP complement: PDTA143EU.

PDTC143EU Maximum Ratings

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage open emitter
-
50
V
VCEO
collector-emitter voltage open base
-
50
V
VEBO
emitter-base voltage open collector
-
10
V
VI
input voltage
positive
negative
-
-
30
-10
V
V
IO
output current (DC)
-
100
mA
ICM
peak collector current
-
100
mA
Ptot
total power dissipation Tamb 25; note 1
-
200
mW
TSTG
Storage temperature
65
+150
Tj
junction temperature
-
150
Tamb
operating ambient temperature
-65
+150
Note
1. Transistor mounted on an FR4 printed-circuit board.

PDTC143EU Features

` Built-in bias resistors R1 and R2 typ. 4.7 k each)
` Simplification of circuit design
` Reduces number of components and board space.

PDTC143EU Typical Application

· Especially suitable for space reduction in interface and driver circuits
· Inverter circuit configurations without use of external resistors.

PDTC143EU Connection Diagram

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