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PH1617-2, PH1617-30, PH1617-60

Table of contents:
Info of PH1617-2
Info of PH1617-30
Info of PH1617-60

PH1617-2, PH1617-30, PH1617-60 Selling Leads, Datasheet

MFG:MA/COM Package Cooled:N/A D/C:08+

PH1617-2, PH1617-30, PH1617-60 Datasheet download

Five Points

Part Number: PH1617-2

MFG: MA/COM

Package Cooled: N/A

D/C: 08+

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PH1617-2 Maximum Ratings

Parameter	Symbol	Rating	Units
Collector-Base Voltage	V_CEO	65	V
Collector-Emitter Voltage	V_CES	65	V
Emitter-Base Voltage	V_EBO	3.0	V
Collector Current	I_C	2.0	A
Power Dissipation	P_D	13.5	W
JunctionTemperature	T_J	200
Storage Temperature	T_stg	-55 to +150
Thermal Resistance	_JC	13	/W

PH1617-2 Features

·Designed for Linear Amplifier Applications
·Class AB: -33 dBc Typ 3rd IMD at 2 Watts PEP
·Class A: +44 dBm Typ 3rd Order Intercept Point
·Common Emitter Configuration
·Internal Input Impedance Matching
·Diffused Emitter Ballasting

PH1617-60 General Description

M/A-COM's PH1617-60 is a silicon bipolar NPN transistor intended for use as a common emitter class AB stage in power amplifiers that operate in the 1615 to 1685 MHz range. This transistor features internal input and output impedance matching, diffused emitter ballasting and gold metalization.

The PH1617-60 is packaged in a low cost, non-hermetic ceramic package which has very low thermal impedance.

PH1617-60 Maximum Ratings

Parameter	Symbol	Rating	Units
Collector-Base Voltage	V_CEO	20	V
Collector-Emitter Voltage	V_CES	65	V
Emitter-Base Voltage	V_EBO	3.0	V
Collector Current	I_C	5.8	A
Power Dissipation	P_D	150	W
Storage Temperature	T_stg	-50 to +150
Junction Temperature	T_J	200
Thermal Resistance	_jc	1.0	/W

PH1617-60 Features

• NPN Silicon Microwave Power Transistor
• Common Emitter Configuration
• Diffused Emitter Ballasting Resistors
• Gold Metalization System
• Internal Input and Output Impedance Matching
• -28 dBc Typical IMD at 60 Watts PEP

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