PH2525L 115, PH2525L T/R, PH2625L Selling Leads, Datasheet
MFG:NXP Package Cooled:SMD4 D/C:06+
PH2525L 115, PH2525L T/R, PH2625L Datasheet download
Part Number: PH2525L 115
MFG: NXP
Package Cooled: SMD4
D/C: 06+
MFG:NXP Package Cooled:SMD4 D/C:06+
PH2525L 115, PH2525L T/R, PH2625L Datasheet download
MFG: NXP
Package Cooled: SMD4
D/C: 06+
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
TOP
PDF/DataSheet Download
Datasheet: PH20100S
File Size: 85128 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PH20100S
File Size: 85128 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PH2625L
File Size: 102628 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
Symbol | Parameter | Conditions | Min | Max | Unit |
VDS | drain-source voltage (DC) | 25 Tj 150 | - | 25 | V |
VDGR | drain-gate voltage (DC) | 25 Tj 150 ; RGS = 20 k | - | 25 | V |
VGS | gate-source voltage | - | ±20 | V | |
ID | drain current (DC) | Tmb = 25 ; VGS = 10 V; Figure 2 and 3 | - | 100 | A |
Tmb = 100 ; VGS = 10 V; Figure 2 | - | 63 | A | ||
IDM | peak drain current | Tmb = 25 ; pulsed; tp 10 s; Figure 3 | - | 300 | A |
Ptot | total power dissipation | Tmb = 25 ; Figure 1 | - | 62.5 | W |
Tstg | storage temperature | -55 | +150 | ||
Tj | junction temperature | -55 | +150 | ||
Source-drain diode | |||||
IS | source (diode forward) current (DC) | Tmb = 25 | - | 52 | A |
ISM | peak source (diode forward) current | Tmb = 25 ; pulsed; tp 10 s | - | 156 | A |
Avalanche ruggedness | |||||
EDS(AL)S | non-repetitive drain-source avalanche energy |
unclamped inductive load; ID = 71 A; tp = 0.1 ms; VDD 25 V; RGS = 50 ; VGS = 10 V; starting at Tj = 25 |
- | 250 | mJ |
EDS(AL)R | repetitive drain-source avalanche energy |
unclamped inductive load; ID = 7.1 A; tp = 0.01 ms; VDD 25 V; RGS = 50 ; VGS = 10 V |
- | 2.5 | mJ |
·Optimized for use in DC-to-DC converters
·Low threshold voltage
·Very low switching and conduction losses
·Low thermal resistance.