Position: Home  > All Categories> Integrated Circuits (ICs) > PH20100S

PH20100S

Features: ·Low thermal resistance·Low gate drive current·SO8 equivalent area footprint·Low on-state resistance.Application·DC-to-DC converters·Switched-mode power suppliesPinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) 25 Tj 150 - 10...

product image

PH20100S Picture
See larger image
SeekIC No. : 004460202 Detail

PH20100S: Features: ·Low thermal resistance·Low gate drive current·SO8 equivalent area footprint·Low on-state resistance.Application·DC-to-DC converters·Switched-mode power suppliesPinoutSpecifications S...

PH20100S Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
PH20100S
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/27

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

·Low thermal resistance
·Low gate drive current
·SO8 equivalent area footprint
·Low on-state resistance.


Application

·DC-to-DC converters
·Switched-mode power supplies


Pinout

Connection Diagram


Specifications

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) 25 Tj 150 - 100 V
VGS gate-source voltage (DC)   - ±20 V
ID drain current (DC) Tmb = 25 ; VGS = 10 V; Figure 2 and 3 - 34.3 A
Tmb = 100 ; VGS = 10 V; Figure 2 - 21.6 A
IDM peak drain current Tmb = 25 ; pulsed; tp 10 s; Figure 3 - 137 A
Ptot total power dissipation Tmb = 25 - 62.5 W
Tstg storage temperature   -55 +150
Tj junction temperature   -55 +150
Source-drain diode
IS source (diode forward) current (DC) Tmb = 25 - 52 A
ISM peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 s - 137 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy		 unclamped inductive load; ID = 12 A;
tp = 0.3 ms; VDD 100 V; VGS = 10 V; starting at Tj = 25 		- 250 mJ



Description

PH20100S, Standard level N-channel enhancement mode field effect transistor in a plastic package using TrenchMOS™ technology.


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Inductors, Coils, Chokes
DR127-330-R
SD53-100-R
Prototyping Products
AVT4168
DE1
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
Undefined Category
VI-B63-IU
X27 589
Filters
PICO2205A
PICO2204A
Tools
TCP202
G084SN05 V.3
View more