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PH20100S,115: MOSFET N-CH TRENCH 100V

PH20100S,115 Data Sheet

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Part Number:: PH20100S,115
Mfg:: NXP Semiconductors
Supply Ability:: 5000

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Upload time: 2024/4/24

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Product Details

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	100 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	34.3 A
Resistance Drain-Source RDS (on) :	0.023 Ohms	Configuration :	Single Triple Source
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SOT-669	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Maximum Operating Temperature : + 150 C
Resistance Drain-Source RDS (on) : 0.023 Ohms
Configuration : Single Triple Source
Package / Case : SOT-669
Continuous Drain Current : 34.3 A

Parameters:

Technical/Catalog Information	PH20100S,115
Vendor	NXP Semiconductors (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	34.3A
Rds On (Max) @ Id, Vgs	23 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds	2264pF @ 25V
Power - Max	62.5W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	39nC @ 10V
Package / Case	LFPak-4
FET Feature	Standard
Drawing Number	568; SOT669; ; 4
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	PH20100S,115 PH20100S,115 568 2175 1 ND 56821751ND 568-2175-1

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