PH6325L, PH6325LT/R, PH640480T-001-I Selling Leads, Datasheet
MFG:NXP Package Cooled:SOT-669 D/C:07+PB
PH6325L, PH6325LT/R, PH640480T-001-I Datasheet download
Part Number: PH6325L
MFG: NXP
Package Cooled: SOT-669
D/C: 07+PB
MFG:NXP Package Cooled:SOT-669 D/C:07+PB
PH6325L, PH6325LT/R, PH640480T-001-I Datasheet download
MFG: NXP
Package Cooled: SOT-669
D/C: 07+PB
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PDF/DataSheet Download
Datasheet: PH6325L
File Size: 142036 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PH600S280
File Size: 86047 KB
Manufacturer: LAMBDA [DENSEI-LAMBDA]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PH600S280
File Size: 86047 KB
Manufacturer: LAMBDA [DENSEI-LAMBDA]
Download : Click here to Download
Symbol | Parameter | Conditions | Min | Max | Unit |
VDS | drain-source voltage (DC) | 25 Tj 150 | - | 25 | V |
VGS | gate-source voltage | - | ±20 | V | |
ID | drain current (DC) | Tmb = 25 ; VGS = 10 V; Figure 2 and 3 | - | 78.7 | A |
Tmb = 100 ; VGS = 10 V; Figure 2 | - | 49.6 | A | ||
IDM | peak drain current | Tmb = 25 ; pulsed; tp 10 s; Figure 3 | - | 236 | A |
Ptot | total power dissipation | Tmb = 25 ; Figure 1 | - | 62.5 | W |
Tstg | storage temperature | -55 | +150 | ||
Tj | junction temperature | -55 | +150 | ||
Source-drain diode | |||||
IS | source (diode forward) current (DC) | Tmb = 25 | - | 52 | A |
ISM | peak source (diode forward) current | Tmb = 25 ; pulsed; tp 10 s | - | 208 | A |
Avalanche ruggedness | |||||
EDS(AL)S | non-repetitive drain-source avalanche energy |
unclamped inductive load; ID = 34 A;tp = 0.15 ms; VDD = 25 V; RGS = 50 ; VGS = 10 V;starting Tj = 25 |
- | 115 | mJ |
EDS(AL)R | repetitive drain-source avalanche energy |
unclamped inductive load; ID = 34 A;tp = 0.15 ms; VDD = 25 V; RGS = 50 ; VGS = 10 V;starting Tj = 25 |
- | 1.2 | mJ |