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PH6325L, PH6325LT/R, PH640480T-001-I

PH6325L, PH6325LT/R, PH640480T-001-I Selling Leads, Datasheet

MFG:NXP  Package Cooled:SOT-669  D/C:07+PB

PH6325L, PH6325LT/R, PH640480T-001-I Picture

PH6325L, PH6325LT/R, PH640480T-001-I Datasheet download

Five Points

Part Number: PH6325L

 

MFG: NXP

Package Cooled: SOT-669

D/C: 07+PB

 

 

 
 
 
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PH6325L Suppliers

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  • PH600S280-24

  • Vendor: lambda Qty: 19 Note: OUR OWN STOCK  Adddate: 2024-04-24
  • Inquire Now
  • JLH TECHNOLOGY CO.   China
    Contact: Mr.SAM LEE   MSN:lesson1992@hotmail.com
    Tel: 86-755-83740160-806
    Fax: 86-755-83740857
    (10)

About PH6325L

PDF/DataSheet Download

Datasheet: PH6325L

File Size: 142036 KB

Manufacturer: PHILIPS [Philips Semiconductors]

Download : Click here to Download

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PH6325LT/R Suppliers

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  • PH600S280-24

  • Vendor: lambda Qty: 19 Note: OUR OWN STOCK  Adddate: 2024-04-24
  • Inquire Now
  • JLH TECHNOLOGY CO.   China
    Contact: Mr.SAM LEE   MSN:lesson1992@hotmail.com
    Tel: 86-755-83740160-806
    Fax: 86-755-83740857
    (10)

About PH600S280

PDF/DataSheet Download

Datasheet: PH600S280

File Size: 86047 KB

Manufacturer: LAMBDA [DENSEI-LAMBDA]

Download : Click here to Download

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PH640480T-001-I Suppliers

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  • PH600S280-24

  • Vendor: lambda Qty: 19 Note: OUR OWN STOCK  Adddate: 2024-04-24
  • Inquire Now
  • JLH TECHNOLOGY CO.   China
    Contact: Mr.SAM LEE   MSN:lesson1992@hotmail.com
    Tel: 86-755-83740160-806
    Fax: 86-755-83740857
    (10)

About PH600S280

PDF/DataSheet Download

Datasheet: PH600S280

File Size: 86047 KB

Manufacturer: LAMBDA [DENSEI-LAMBDA]

Download : Click here to Download

Related PDF Download

Related Part Number

PH6325L General Description

Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.

PH6325L Maximum Ratings

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) 25 Tj 150 - 25 V
VGS gate-source voltage   - ±20 V
ID drain current (DC) Tmb = 25 ; VGS = 10 V; Figure 2 and 3 - 78.7 A
Tmb = 100 ; VGS = 10 V; Figure 2 - 49.6 A
IDM peak drain current Tmb = 25 ; pulsed; tp 10 s; Figure 3 - 236 A
Ptot total power dissipation Tmb = 25 ; Figure 1 - 62.5 W
Tstg storage temperature   -55 +150
Tj junction temperature   -55 +150
Source-drain diode
IS source (diode forward) current (DC) Tmb = 25 - 52 A
ISM peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 s - 208 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
unclamped inductive load; ID = 34 A;tp = 0.15 ms; VDD = 25 V; RGS = 50 ;
VGS = 10 V;starting Tj = 25
- 115 mJ
EDS(AL)R repetitive drain-source avalanche
energy
unclamped inductive load; ID = 34 A;tp = 0.15 ms; VDD = 25 V; RGS = 50 ;
VGS = 10 V;starting Tj = 25
- 1.2 mJ

PH6325L Features

·Optimized for use in DC-to-DC converters
·Low threshold voltage
·Very low switching and conduction losses
·Low thermal resistance.

PH6325L Typical Application

·DC-to-DC converters
·Voltage regulators
·Switched-mode power supplies
·Notebook computers.

PH6325L Connection Diagram

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